Browsing by Author Xu, Shengqiang

Showing results 1 to 9 of 9
Issue DateTitleAuthor(s)
 2018Germanium-tin (GeSn) p-channel fin field-effect transistor fabricated on a novel GeSn-on-insulator substrateLei, Dian; Lee, Kwang Hong; Huang, Yi-Chiau; Wang, Wei; Masudy-Panah, Saeid; Yadav, Sachin; Kumar, Annie; Dong, Yuan; Kang, Yuye; Xu, Shengqiang; Wu, Ying; Tan, Chuan Seng; Gong, Xiao; Yeo, Yee-Chia
2018GeSn lateral p-i-n photodetector on insulating substrateXu, Shengqiang; Huang, Yi-Chiau; Lee, Kwang Hong; Wang, Wei; Dong, Yuan; Lei, Dian; Masudy-Panah, Saeid; Tan, Chuan Seng; Gong, Xiao; Yeo, Yee-Chia
 2021Ge₀.₉₅Sn₀.₀₅ gate-all-around p-channel metal-oxide-semiconductor field-effect transistors with sub-3 nm nanowire widthKang, Yuye; Xu, Shengqiang; Han, Kaizhen; Kong, Eugene Y.-J.; Song, Zhigang; Luo, Sheng; Kumar, Annie; Wang, Chengkuan; Fan, Weijun; Liang, Gengchiau; Gong, Xiao
2020High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µmZhou, Hao; Xu, Shengqiang; Lin, Yiding; Huang, Yi-Chiau; Son, Bongkwon; Chen, Qimiao; Guo, Xin; Lee, Kwang Hong; Goh, Simon Chun-Kiat; Gong, Xiao; Tan, Chuan Seng
2021High-performance back-illuminated Ge₀.₉₂Sn₀.₀₈/Ge multiple-quantum-well photodetector on Si platform for SWIR detectionWu, Shaoteng; Xu, Shengqiang; Zhou, Hao; Jin, Yuhao; Chen, Qimiao; Huang, Yi-Chiau; Zhang, Lin; Gong, Xiao; Tan, Chuan Seng
2018High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platformWang, Wei; Lei, Dian; Huang, Yi-Chiau; Lee, Kwang Hong; Loke, Wan-Khai; Dong, Yuan; Xu, Shengqiang; Tan, Chuan Seng; Wang, Hong; Yoon, Soon-Fatt; Gong, Xiao; Yeo, Yee-Chia
2019High-speed photo detection at two-micron-wavelength : technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrateXu, Shengqiang; Wang, Wei; Huang, Yi-Chiau; Dong, Yuan; Masudy-Panah, Saeid; Wang, Hong; Gong, Xiao; Yeo, Yee-Chia
2020Photo detection and modulation from 1,550 to 2,000 nm realized by GeSn/Ge multiple-quantum-well photodiode on 300-mm Si substrateZhou, Hao; Xu, Shengqiang; Wu, Shaoteng; Huang, Yi-Chiau; Zhao, Peng; Tong, Jinchao; Son, Bongkwon; Guo, Xin; Zhang, Dao Hua; Gong, Xiao; Tan, Chuan Seng
2018Strain relaxation of germanium-tin (GeSn) finsKang, Yuye; Huang, Yi-Chiau; Lee, Kwang Hong; Bao, Shuyu; Wang, Wei; Lei, Dian; Masudy-Panah, Saeid; Dong, Yuan; Wu, Ying; Xu, Shengqiang; Tan, Chuan Seng; Gong, Xiao; Yeo, Yee-Chia