Browsing by Author Yeo, Yee-Chia

Showing results 1 to 16 of 16
Issue DateTitleAuthor(s)
 2013AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free processLiu, Xinke; Zhan, Chunlei; Chan, Kwok Wai; Owen, Man Hon Samuel; Liu, Wei; Chi, Dong Zhi; Tan, Leng Seow; Chen, Kevin Jing; Yeo, Yee-Chia
 2012AlGaN/GaN-on-silicon metal–oxide–semiconductor high-electron-mobility transistor with breakdown voltage of 800 V and on-state resistance of 3 mΩ·cm2 using a complementary metal–oxide–semiconductor compatible gold-free processYeo, Yee-Chia; Liu, Xinke; Zhan, Chunlei; Chan, Kwok Wai; Liu, Wei; Tan, Leng Seow; Chen, Kevin Jing
 2012Effect of growth temperature on the epitaxy strain relaxation and the tilt of InxAl1−x as graded layer grown by solid-source molecular beam epitaxyLoke, Wan Khai; Tan, Kian Hua; Wicaksono, Satrio; Yoon, Soon Fatt; Owen, Man Hon Samuel; Yeo, Yee-Chia
2012Electronic band structure and effective mass parameters of Ge1−xSnx alloysLow, Kain Lu; Yang, Yue; Han, Genquan; Fan, Weijun; Yeo, Yee-Chia
2018GeSn lateral p-i-n photodetector on insulating substrateXu, Shengqiang; Huang, Yi-Chiau; Lee, Kwang Hong; Wang, Wei; Dong, Yuan; Lei, Dian; Masudy-Panah, Saeid; Tan, Chuan Seng; Gong, Xiao; Yeo, Yee-Chia
2016GeSn-on-insulator substrate formed by direct wafer bondingLee, Kwang Hong; Bao, Shuyu; Wang, Wei; Lei, Dian; Wang, Bing; Gong, Xiao; Tan, Chuan Seng; Yeo, Yee-Chia
2018High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platformWang, Wei; Lei, Dian; Huang, Yi-Chiau; Lee, Kwang Hong; Loke, Wan-Khai; Dong, Yuan; Xu, Shengqiang; Tan, Chuan Seng; Wang, Hong; Yoon, Soon-Fatt; Gong, Xiao; Yeo, Yee-Chia
2019High-speed photo detection at two-micron-wavelength : technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrateXu, Shengqiang; Wang, Wei; Huang, Yi-Chiau; Dong, Yuan; Masudy-Panah, Saeid; Wang, Hong; Gong, Xiao; Yeo, Yee-Chia
2014Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctionsRichard D'Costa, Vijay; Subramanian, Sujith; Li, Daosheng; Wicaksono, Satrio; Yoon, Soon Fatt; Tok, Eng Soon; Yeo, Yee-Chia
2016InGaP grown on Ge (100) by molecular beam epitaxy: a spectroscopic ellipsometry studyD’Costa, Vijay Richard; Loke, Wan Khai; Zhou, Qian; Yoon, Soon Fatt; Yeo, Yee-Chia
2017Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs)Kumar, Annie; Lee, Shuh-Ying; Yadav, Sachin; Tan, Kian Hua; Loke, Wan Khai; Dong, Yuan; Lee, Kwang Hong; Wicaksono, Satrio; Liang, Gengchiau; Yoon, Soon-Fatt; Antoniadis, Dimitri; Yeo, Yee-Chia; Gong, Xiao
2015Mid-infrared to ultraviolet optical properties of InSb grown on GaAs by molecular beam epitaxyD'Costa, Vijay Richard; Tan, Kian Hua; Jia, Bo Wen; Yoon, Soon Fatt; Yeo, Yee-Chia
 2012N-channel InGaAs field-effect transistors formed on germanium-on-insulator substratesIvana; Subramanian, Sujith; Owen, Man Hon Samuel; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt; Yeo, Yee-Chia
2018Strain relaxation of germanium-tin (GeSn) finsKang, Yuye; Huang, Yi-Chiau; Lee, Kwang Hong; Bao, Shuyu; Wang, Wei; Lei, Dian; Masudy-Panah, Saeid; Dong, Yuan; Wu, Ying; Xu, Shengqiang; Tan, Chuan Seng; Gong, Xiao; Yeo, Yee-Chia
2017Thermal stability of germanium-tin (GeSn) finsLei, Dian; Lee, Kwang Hong; Bao, Shuyu; Wang, Wei; Masudy-Panah, Saeid; Tan, Chuan Seng; Tok, Eng Soon; Gong, Xiao; Yeo, Yee-Chia
2013Tunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junctionHu, Hailong.; Guo, Pengfei; Yang, Yue; Cheng, Yuanbing; Han, Genquan; Pan, Jisheng; Ivana; Zhang, Zheng; Shen, Zexiang; Chia, Ching Kean; Yeo, Yee-Chia