Browsing by Author Yoon, Soon Fatt

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Issue DateTitleAuthor(s)
20111.3-μm In(Ga)As quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief processYoon, Soon Fatt; Tong, Cunzhu; Fan, Weijun; Ding, Y.; Zhao, L. J.; Xu, D. W.
2007Annealing effects on the optical properties of a GaInNAs double barrier quantum well infrared photodetectorMa, B. S.; Dang, Y. X.; Fan, Weijun; Cheah, Weng Kwong; Yoon, Soon Fatt
2014Bonding technology for semiconductor wafers and structuresChew, Zong Hui
 2012Broadband terahertz plasmonic response of touching InSb disksHanham, S. M.; Fernández-Domínguez, A. I.; Teng, Jing Hua; Ang, S. S.; Lim, K. P.; Yoon, Soon Fatt; Ngo, C. Y.; Klein, N.; Pendry, J. B.; Maier, Stefan A.
2002Characterisation of a diamond-like carbon deposition processTan, Kian Hua.
1999Characterisation of amorphous carbon films deposited using ECR-CVDWu, Yangsheng.
1998Characterisation of compound semiconductors grown by molecular beam epitaxyZhang, Peng Hua
1995Characteristics of InAlAs/InGaAs heterostructures grown on InP substrates by molecular beam epitaxyMiao, Yubo.
 2012Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 µm room-temperature emissionLiang, Y. Y.; Ngo, C. Y.; Fitzgerald, Eugene A.; Yoon, Soon Fatt; Loke, Wan Khai
2002Characterization of amorphous silicon carbide thin films for display applicationsAhn, Jaeshin; Yoon, Soon Fatt
2002Comparison of nitrogen compositions in the as-grown GaN[sub x]As[sub 1−x] on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopyFan, Weijun; Yoon, Soon Fatt; Ng, T. K.; Wang, S. Z.; Loke, Wan Khai; Liu, R.; Wee, A.
2001Deep level effects on the characteristics of high electron mobility transistors grown by solid source MBEYip, Kim Hong.
2002Deposition and characterization of metal-containing carbon (Me-c:h) filmsHuang, Qingfeng.
2003Development of deep submicron HEMT MMIC for millimetre-wave applicationsNg, Geok Eng; Yuan, Xiaocong; Yoon, Soon Fatt; Radhakrishnan, K.; Law, Choi Look; Ooi, Boon Siew; Prasad Krishnamachar
1998Development of diamond-like carbon films by ECR-CVDYang, Hong
1996Development of silicon carbide thin films for optoelectronic device applicationsJi, Rong
2006Different temperature and pressure behavior of band edge and N-cluster emissions in GaAs0.973Sb0.022N0.005Ding, K.; Wicaksono, Satrio; Ma, B. S.; Su, F. H.; Wang, W. J.; Li, G. H.; Yoon, Soon Fatt; Fan, Weijun
 2012Effect of growth temperature on the epitaxy strain relaxation and the tilt of InxAl1−x as graded layer grown by solid-source molecular beam epitaxyLoke, Wan Khai; Tan, Kian Hua; Wicaksono, Satrio; Yoon, Soon Fatt; Owen, Man Hon Samuel; Yeo, Yee-Chia
2002Effect of In and N incorporation on the properties of lattice-matched GaInNAs/GaAs grown by radio frequency plasma-assisted solid-source molecular beam epitaxyLoke, Wan Khai; Yoon, Soon Fatt; Ng, T. K.; Wang, S. Z.; Fan, Weijun
2017Effect of in situ annealing on the structural and electrical properties and infrared photodetection of III-Sb on GaAs using interfacial misfit arrayJia, Bo Wen; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt