Browsing by Author Gao, Bin

Showing results 1 to 8 of 8
Issue DateTitleAuthor(s)
2015Deterministic Restriction on Pluripotent State Dissolution by Cell-Cycle PathwaysGonzales, Kevin Andrew Uy; Liang, Hongqing; Lim, Yee-Siang; Chan, Yun-Shen; Yeo, Jia-Chi; Tan, Cheng-Peow; Gao, Bin; Le, Beilin; Tan, Zi-Ying; Low, Kok-Yao; Liou, Yih-Cherng; Bard, Frederic; Ng, Huck-Hui
2022Discovery of charge order and corresponding edge state in kagome magnet FeGeYin, Jia-Xin; Jiang, Yu-Xiao; Teng, Xiaokun; Md. Shafayat Hossain; Mardanya, Sougata; Chang, Tay-Rong; Ye, Zijin; Xu, Gang; Denner, M. Michael; Neupert, Titus; Lienhard, Benjamin; Deng, Han-Bin; Setty, Chandan; Qimiao Si; Chang, Guoqing; Guguchia, Zurab; Gao, Bin; Shumiya, Nana; Zhang, Qi; Cochran, Tyler A.; Multer, Daniel; Yi, Ming; Dai, Pengcheng; M. Zahid Hasan
 2012Improvement of endurance degradation for oxide based resistive switching memory devices correlated with oxygen vacancy accumulation effectGao, Bin; Yu, Hongyu; Lu, Y.; Chen, B.; Fang, Z.; Fu, Y. H.; Yang, J. Q.; Liu, L. F.; Liu, X. Y.; Kang, J. F.
2023Microbial synthesis of Prussian blue for potentiating checkpoint blockade immunotherapyWang, Dongdong; Liu, Jiawei; Wang, Changlai; Zhang, Weiyun; Yang, Guangbao; Chen, Yun; Zhang, Xiaodong; Wu, Yinglong; Gu, Long; Chen, Hongzhong; Yuan, Wei; Chen, Xiaokai; Liu, Guofeng; Gao, Bin; Chen, Qianwang; Zhao, Yanli
 2012Microscopic mechanism for unipolar resistive switching behaviour of nickel oxidesChen, Y. S.; Kang, J. F.; Chen, B.; Liu, L. F.; Liu, X. Y.; Wang, Y. Y.; Wu, L.; Wang, J. Y.; Chen, Q.; Wang, E. G.; Gao, Bin; Yu, Hongyu
 2012A novel self-selection bipolar RRAM cell with ultra-low operation currents for cross-point applicationGao, Bin; Kang, Jinfeng; Chen, Bing; Huang, Peng; Ma, Long; Zhang, Feifei; Liu, Lifeng; Liu, Xiaoyan; Tran, Xuan Anh; Yu, Hongyu
 2012Oxide-based RRAM : a novel defect-engineering-based implementation for multilevel data storageGao, Bin; Yu, Hongyu; Kang, J. F.; Chen, B.; Liu, L. F.; Liu, X. Y.; Wang, Z. R.; Yu, B.
 2012A self-rectifying HfOx-based unipolar RRAM with NiSi electrodeTran, Xuan Anh; Gao, Bin; Yu, Hongyu; Zhu, W. G.; Kang, J. F.; Liu, W. J.; Fang, Z.; Wang, Z. R.; Yeo, Y. C.; Nguyen, B. Y.; Li, M. F.