| Issue Date | Title | Author(s) |
 | 2022 | Direct bandgap GeSn nanowires enabled with ultrahigh tension from harnessing intrinsic compressive strain | Burt, Daniel; Joo, Hyo-Jun; Kim, Youngmin; Jung, Yongduck; Chen, Melvina; Luo, Manlin; Kang, Dong-Ho; Assali, Simone; Zhang, Lin; Son, Bongkwon; Fan, Weijun; Moutanabbir, Oussama; Ikonic, Zoran; Tan, Chuan Seng; Huang, Yi-Chiau; Nam, Donguk |
| | 2018 | Germanium-tin (GeSn) p-channel fin field-effect transistor fabricated on a novel GeSn-on-insulator substrate | Lei, Dian; Lee, Kwang Hong; Huang, Yi-Chiau; Wang, Wei; Masudy-Panah, Saeid; Yadav, Sachin; Kumar, Annie; Dong, Yuan; Kang, Yuye; Xu, Shengqiang; Wu, Ying; Tan, Chuan Seng; Gong, Xiao; Yeo, Yee-Chia |
| 2018 | GeSn lateral p-i-n photodetector on insulating substrate | Xu, Shengqiang; Huang, Yi-Chiau; Lee, Kwang Hong; Wang, Wei; Dong, Yuan; Lei, Dian; Masudy-Panah, Saeid; Tan, Chuan Seng; Gong, Xiao; Yeo, Yee-Chia |
 | 2023 | GeSn/Ge multiquantum-well vertical-cavity surface-emitting p-i-n structures and diode emitters on a 200 mm Ge-on-insulator platform | Chen, Qimiao; Jung, Yongduck; Zhou, Hao; Wu, Shaoteng; Gong, Xiao; Huang, Yi-Chiau; Lee, Kwang Hong; Zhang, Lin; Nam, Donguk; Liu, Jian; Luo, Jun-Wei; Fan, Weijun; Tan, Chuan Seng |
| 2023 | Ge₀.₉₂Sn₀.₀₈/Ge multi-quantum-well LEDs operated at 2-μm-wavelength on 12-inch Si substrate | Wu, Shaoteng; Zhang, Lin; Wan, Rongqiao; Zhou, Hao; Lee, Kwang Hong; Chen, Qimiao; Huang, Yi-Chiau; Gong, Xiao; Tan, Chuan Seng |
| 2020 | High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm | Zhou, Hao; Xu, Shengqiang; Lin, Yiding; Huang, Yi-Chiau; Son, Bongkwon; Chen, Qimiao; Guo, Xin; Lee, Kwang Hong; Goh, Simon Chun-Kiat; Gong, Xiao; Tan, Chuan Seng |
| 2021 | High-performance back-illuminated Ge₀.₉₂Sn₀.₀₈/Ge multiple-quantum-well photodetector on Si platform for SWIR detection | Wu, Shaoteng; Xu, Shengqiang; Zhou, Hao; Jin, Yuhao; Chen, Qimiao; Huang, Yi-Chiau; Zhang, Lin; Gong, Xiao; Tan, Chuan Seng |
| 2018 | High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform | Wang, Wei; Lei, Dian; Huang, Yi-Chiau; Lee, Kwang Hong; Loke, Wan-Khai; Dong, Yuan; Xu, Shengqiang; Tan, Chuan Seng; Wang, Hong; Yoon, Soon-Fatt; Gong, Xiao; Yeo, Yee-Chia |
| 2019 | High-speed photo detection at two-micron-wavelength : technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate | Xu, Shengqiang; Wang, Wei; Huang, Yi-Chiau; Dong, Yuan; Masudy-Panah, Saeid; Wang, Hong; Gong, Xiao; Yeo, Yee-Chia |
| 2020 | Photo detection and modulation from 1,550 to 2,000 nm realized by GeSn/Ge multiple-quantum-well photodiode on 300-mm Si substrate | Zhou, Hao; Xu, Shengqiang; Wu, Shaoteng; Huang, Yi-Chiau; Zhao, Peng; Tong, Jinchao; Son, Bongkwon; Guo, Xin; Zhang, Dao Hua; Gong, Xiao; Tan, Chuan Seng |
| 2023 | A route toward high-detectivity and low-cost short-wave infrared photodetection: GeSn/Ge multiple-quantum-well photodetectors with a dielectric nanohole array metasurface | Chen, Qimiao; Zhou, Hao; Xu, Shengqiang; Huang, Yi-Chiau; Wu, Shaoteng; Lee, Kwang Hong; Gong, Xiao; Tan, Chuan Seng |
| 2022 | Single-crystalline Ge₁₋ₓSnₓ/Si p–n heterojunction photodiodes with Sn compositions up to 10% | An, Shu; Huang, Yi-Chiau; Wu, Chen-Ying; Huang, Po-Rei; Chang, Guo-En; Lai, Junyu; Seo, Jung-Hun; Kim, Munho |
| 2018 | Strain relaxation of germanium-tin (GeSn) fins | Kang, Yuye; Huang, Yi-Chiau; Lee, Kwang Hong; Bao, Shuyu; Wang, Wei; Lei, Dian; Masudy-Panah, Saeid; Dong, Yuan; Wu, Ying; Xu, Shengqiang; Tan, Chuan Seng; Gong, Xiao; Yeo, Yee-Chia |
| 2021 | Strain-relaxed GeSn-on-insulator (GeSnOI) microdisks | Burt, Daniel; Joo, Hyo-Jun; Jung, Yongduck; Kim, Youngmin; Chen, Melvina; Huang, Yi-Chiau; Nam, Donguk |
