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Issue DateTitleAuthor(s)
2019A 0.044-mm2 0.5-to-7-GHz resistor-plus-source-follower-feedback noise-cancelling LNA achieving a flat NF of 3.3±0.45 dBYu, Haohong; Chen, Yong; Boon, Chirn Chye; Li, Chenyang; Mak, Pui-In; Martins, Rui P.
20170.058 mm2 13 Gbit/s inductorless analogue equaliser with low-frequency equalisation compensating 15 dB channel lossBoon, Chirn Chye; Balachandran, Arya; Chen, Yong; Choi, Pilsoon
2017A 0.058 mm2 24 µw temperature sensor in 40 nm cmos process with ± 0.5 ◦c inaccuracy from −55 to 175 ◦cZhu, Di; Siek, Liter
20040.18-µm CMOS push-pull power amplifier with antenna in IC packageWang, Wei; Zhang, Yue Ping
2018A 0.18-μm CMOS voltage-to-frequency converter with low circuit sensitivityKoay, Kuan Chuang; Chan, Pak Kwong
2008A 0.18μm CMOS 802.15.4a UWB transceiver for communication and localizationZheng, Yuanjin; Arasu, Muthukumaraswamy Annamalai; Wong, King Wah; The, Yen Ju; Poh, Andrew Hoe Suan; Tran, Duy Duong; Yeoh, Wooi Gan; Kwong, Dim Lee
 2012A 0.18μm front end for ECG/EEG/neural sensor interfaceHan, Dong; Zheng, Yuanjin; Je, Minkyu
20160.2 V 8T SRAM With PVT-Aware Bitline Sensing and Column-Based Data RandomizationDo, Anh Tuan; Lee, Zhao Chuan; Wang, Bo; Chang, Ik-Joon; Liu, Xin; Kim, Tony Tae-Hyoung
2008A 0.2 V, 480 kb subthreshold SRAM with 1 k cells per bitline for ultra-low-voltage computingKim, Tony Tae-Hyoung; Liu, Jason.; Keane, John.; Kim, Chris H.
2017A 0.4 V 12T 2RW dual-port SRAM with suppressed common-row-access disturbanceWang, Bo; Zhou, Jun; Kim, Tony Tae-Hyoung
 2013A 0.45V 100-channel neural-recording IC with sub-µW/channel consumption in 0.18µm CMOSHan, Dong; Zheng, Yuanjin; Rajkumar, Ramamoorthy; Dawe, Gavin; Je, Minkyu
 2013A 0.4V 7T SRAM with write through virtual ground and ultra-fine grain power gating switchesKim, Tony Tae-Hyoung; Yeoh, Yuan Lin; Wang, Bo; Yu, Xiangyao
 2011A 0.6-V high reverse-isolation through feedback self-cancellation for single-stage noncascode CMOS LNATran, T. T. N.; Boon, Chirn Chye; Do, Manh Anh; Yeo, Kiat Seng
 20130.6mW 6.3 GHz 40nm CMOS divide-by-2/3 prescaler using heterodyne phase-locking techniqueYu, Xiao Peng; Lu, Zhenghao; Lim, Wei Meng; Yeo, Kiat Seng
20140.77 fJ/bit/search content addressable memory using small match line swing and automated background checking scheme for variation toleranceDo, Anh Tuan; Yin, Chun; Velayudhan, Kavitha; Lee, Zhao Chuan; Yeo, Kiat Seng; Kim, Tony Tae-Hyoung
 2011A 0.8-μW window SAR ADC with offset cancellation for digital DC–DC convertersFoong, Huey Chian; Tan, Meng Tong; Zheng, Yuanjin
 2013A 0.9-µ A quiescent current output-capacitorless LDO regulator with adaptive power transistors in 65-nm CMOSChong, Sau Siong; Chan, Pak Kwong
 20110.94(K0.5Na0.5)NbO3–0.06LiNbO3 piezoelectric ceramics prepared from the solid state reaction modified with polyvinylpyrrolidone (PVP) of different molecular weightsTan, Chee Kiang Ivan; Yao, Kui; Goh, Phoi Chin; Ma, Jan
20151 MDB crisis and political funding : whither Malaysian politics?Yang, Razali Kassim
 20141,2,4,3-Triazaborole-based neutral oxoborane stabilized by a Lewis acidLoh, Ying Kai; Chong, Che Chang; Ganguly, Rakesh; Li, Yongxin; Vidovic, Dragoslav; Kinjo, Rei