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III-V semiconductors
Showing results 1 to 6 of 6
| Issue Date | Title | Author(s) |
 | 2016 | Band alignment of HfO2/AlN heterojunction investigated by X-ray photoelectron spectroscopy | Ye, Gang; Wang, Hong; Ji, Rong |
| 2016 | Formation of periodic interfacial misfit dislocation array at the InSb/GaAs interface via surface anion exchange | Jia, Bo Wen; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt |
| 2017 | Metalorganic chemical vapor deposition-regrown Ga-rich InGaP films on SiGe virtual substrates for Si-based III-V optoelectronic device applications | Kim, TaeWan; Wang, Bing; Wang, Cong; Kohen, David A.; Hwang, Jeong Woo; Shin, Jae Cheol; Kang, Sang-Woo; Michel, Jürgen |
| 2015 | Mid-infrared to ultraviolet optical properties of InSb grown on GaAs by molecular beam epitaxy | D'Costa, Vijay Richard; Tan, Kian Hua; Jia, Bo Wen; Yoon, Soon Fatt; Yeo, Yee-Chia |
| 2016 | Optical characteristics of p-type GaAs-based semiconductors towards applications in photoemission infrared detectors | Lao, Y. F.; Perera, A. G. U.; Wang, H. L.; Zhao, J. H.; Jin, Y. J.; Zhang, Dao Hua |
| 2017 | Stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy | Agrawal, Manvi; Ravikiran, Lingaparthi; Dharmarasu, Nethaji; Radhakrishnan, K.; Karthikeyan, Giri Sadasivam; Zheng, Yuanjin |
