Academic Profile : Faculty
Assoc Prof Ang Diing Shenp
Associate Professor, School of Electrical & Electronic Engineering
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Dr. Ang obtained both his B. Eng. (hons) and Ph.D. degrees in electrical engineering from the National University of Singapore. His research interests lie mainly in novel semiconductor devices for advanced memory technologies and neuromorphic (non von Neumann) computing and CMOS device reliability physics (NBTI, HCI, and TDDB). In 2008, together with his Ph.D. student Ms. Ong Yi Ching, their work on the application of scanning probe techniques to study electronic trap generation in high-k gate dielectrics won the Bronze Prize at the 3rd Taiwan Semiconductor Manufacturing Company Outstanding Student Research Competition (under the category of Physics, Chemistry of Material for Nano-Scale Devices). In 2017, his joint work with Visiting Scientist Mr. Tomohito Kawashima from Toshiba won the First Prize of the Best Posters Competition at the China Semiconductor Technology International Conference. In 2024, his joint work with M.Sc. student Ms. Lin Xiaoyu won the Best Paper Award at the 17th Smart Systems Integration Conference held in Hamburg Germany. Their work also won the Silver Prize of the 2024 Best Paper Awards competition organized by the Pattern Recognition and Machine Intelligence Association.
Dr. Ang was invited to serve on the technical program committees of the IEEE International Reliability Physics Symposium (2004-2006, 2013), International IEEE International Integrated Reliability Workshop (2009-2013), IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (2004-2015) and IEEE Electron Devices Technology and Manufacturing Conference (2020, 2021 and 2025). He also served as a member of the editorial board of the Open Electrical and Electronic Engineering Journal from 2007-2016 and as a guest editor in 2023 for a topical volume on neuromorphic engineering for Frontiers in Neuroscience. In 2024, he was invited to be a judge for Micron Singapore's Technical Seminar-Frontend.
Dr. Ang was invited to serve on the technical program committees of the IEEE International Reliability Physics Symposium (2004-2006, 2013), International IEEE International Integrated Reliability Workshop (2009-2013), IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (2004-2015) and IEEE Electron Devices Technology and Manufacturing Conference (2020, 2021 and 2025). He also served as a member of the editorial board of the Open Electrical and Electronic Engineering Journal from 2007-2016 and as a guest editor in 2023 for a topical volume on neuromorphic engineering for Frontiers in Neuroscience. In 2024, he was invited to be a judge for Micron Singapore's Technical Seminar-Frontend.
1. Novel memory technologies (conductive bridge random access memory (CBRAM), ferroelectric FET memories)
2. Novel semiconductor devices (e.g., optoelectronic memories) for neuromorphic/physical reservoir computing
3. Reliability physics and characterization of nanoscale transistors (negative-bias temperature instability, hot-carrier effects, gate oxide breakdown)
We are looking for passionate post-doc researchers skilled in cleanroom fabrication to join us for a project on memristors for CBRAM and neuromorphic device applications.
2. Novel semiconductor devices (e.g., optoelectronic memories) for neuromorphic/physical reservoir computing
3. Reliability physics and characterization of nanoscale transistors (negative-bias temperature instability, hot-carrier effects, gate oxide breakdown)
We are looking for passionate post-doc researchers skilled in cleanroom fabrication to join us for a project on memristors for CBRAM and neuromorphic device applications.
- Probing the mechanisms behind the highly repeatable resistive switching of conductive bridge random access memory
- A novel high-performance selector device for 3D ReRAM integration
- Development of Radio Frequency Switches for 6G and Beyond
US 2018/0166495 A1: Sensor Element, Image Sensor, Methods Of Forming And Operating The Same (2019)
Abstract: A sensor element for sensing optical light may be provided. The sensor element may include a first electrode for electrically coupling to a first supply voltage, a second electrode for electrically coupling to a second supply voltage, and an oxide dielectric element between the first electrode and the second electrode. The oxide dielectric element may be configured to form a conductive filament upon a potential difference between the first supply voltage and the second supply voltage exceeding a threshold level, thereby decreasing a resistance of the oxide dielectric element. The sensor element may also include a detector. The first electrode may be configured to allow the optical light to pass through the first electrode to the oxide dielectric element. The detector may be configured to detect an increase in the resistance of the oxide dielectric element upon the oxide dielectric element receiving the optical light.
Abstract: A sensor element for sensing optical light may be provided. The sensor element may include a first electrode for electrically coupling to a first supply voltage, a second electrode for electrically coupling to a second supply voltage, and an oxide dielectric element between the first electrode and the second electrode. The oxide dielectric element may be configured to form a conductive filament upon a potential difference between the first supply voltage and the second supply voltage exceeding a threshold level, thereby decreasing a resistance of the oxide dielectric element. The sensor element may also include a detector. The first electrode may be configured to allow the optical light to pass through the first electrode to the oxide dielectric element. The detector may be configured to detect an increase in the resistance of the oxide dielectric element upon the oxide dielectric element receiving the optical light.
Awards
1. SIlver Prize, 2024 Pattern Recognition and Machine Intelligence Association Best Paper Awards Competition (M.Sc. Student: Ms. Lin Xiaoyu)
2. Best Paper Award, 17th (2024) Smart Systems Integration Conference, Hamburg, Germany (M.Sc. Student: Ms. Lin Xiaoyu)
3. First Prize of the Best Posters Competition, 2017 China Semiconductor Technology International Conference (Visiting Scientist: Mr. Tomohito Kawashima (Toshiba))
4. Bronze Prize for the category “Physics, Chemistry of Materials for Nano-Scale Devices”, 3rd (2008) Taiwan Semiconductor Manufacturing Company Outstanding Research Student Competition (Ph.D. student: Ms. Ong Yi Ching)
2. Best Paper Award, 17th (2024) Smart Systems Integration Conference, Hamburg, Germany (M.Sc. Student: Ms. Lin Xiaoyu)
3. First Prize of the Best Posters Competition, 2017 China Semiconductor Technology International Conference (Visiting Scientist: Mr. Tomohito Kawashima (Toshiba))
4. Bronze Prize for the category “Physics, Chemistry of Materials for Nano-Scale Devices”, 3rd (2008) Taiwan Semiconductor Manufacturing Company Outstanding Research Student Competition (Ph.D. student: Ms. Ong Yi Ching)
Fellowships & Other Recognition
1. One of the Most Cited Articles in 2023
J. Y. Li, H. Abbas, D. S. Ang, A. Ali, and X. Ju, “Emerging resistive switching-based artificial neuron and synapse devices for neuromorphic electronics,” Nanoscale Horizons, vol. 8, no. 11, pp. 1456-1484, Oct. 2023. DOI: 10.1039/D3NH00180F (Advance Article 7 Aug. 2023)
2. Editor's Pick
D. Berco and D. S. Ang, “Inducing alternating nanoscale rectification in a dielectric material for bidirectional-trigger artificial synapses,” Journal of Vacuum Science and Technology B, vol. 37, no. 6, art. no. 061806, Oct. 2019. DOI: 10.1116/1.5123665
3. Top 10% Most Downloaded Papers
D. Berco and D. S. Ang, “Recent progress in artificial synaptic devices paving the way toward an artificial cogni-retina for bionic and machine vision,” Advanced Intelligent Systems, vol. 1, art. no. 1900003, 2019. DOI: 10.1002/aisy.201900003
4. One of the Top Articles in Device Physics
H. Z. Zhang, D. S. Ang, Y. Zhou, and X. P. Wang, “Enlarged read window in the asymmetric ITO/HfOx/TiN complementary resistive switch,” Applied Physics Letters, vol. 111, no. 4, art. no. 043501, Jul. 2017. DOI: 10.1063/1.4995252
J. Y. Li, H. Abbas, D. S. Ang, A. Ali, and X. Ju, “Emerging resistive switching-based artificial neuron and synapse devices for neuromorphic electronics,” Nanoscale Horizons, vol. 8, no. 11, pp. 1456-1484, Oct. 2023. DOI: 10.1039/D3NH00180F (Advance Article 7 Aug. 2023)
2. Editor's Pick
D. Berco and D. S. Ang, “Inducing alternating nanoscale rectification in a dielectric material for bidirectional-trigger artificial synapses,” Journal of Vacuum Science and Technology B, vol. 37, no. 6, art. no. 061806, Oct. 2019. DOI: 10.1116/1.5123665
3. Top 10% Most Downloaded Papers
D. Berco and D. S. Ang, “Recent progress in artificial synaptic devices paving the way toward an artificial cogni-retina for bionic and machine vision,” Advanced Intelligent Systems, vol. 1, art. no. 1900003, 2019. DOI: 10.1002/aisy.201900003
4. One of the Top Articles in Device Physics
H. Z. Zhang, D. S. Ang, Y. Zhou, and X. P. Wang, “Enlarged read window in the asymmetric ITO/HfOx/TiN complementary resistive switch,” Applied Physics Letters, vol. 111, no. 4, art. no. 043501, Jul. 2017. DOI: 10.1063/1.4995252
Courses Taught
1. IE1005 From Computational Thinking to Programming
2. EE2103 Semiconductor Fundamentals
3. EE4647 Microelectronic Devices
4. EE4694 IC Reliability and Failure Analysis
2. EE2103 Semiconductor Fundamentals
3. EE4647 Microelectronic Devices
4. EE4694 IC Reliability and Failure Analysis
Supervision of PhD Students
21 Ph.D. students and 6 M.Eng. students have graduated from our lab. We are constantly looking for dedicated Ph.D. student researchers to join us. Please visit our lab (https://ndl-ntu.github.io/) to find out more.