Academic Profile : Faculty
Assoc Prof Ang Diing Shenp
Associate Professor, School of Electrical & Electronic Engineering
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Dr. Ang obtained both his B. Eng. (hons) and Ph.D. degrees in electrical engineering from the National University of Singapore. He joined the School of Electrical and Electronic Engineering, Nanyang Technological University in July 2002 as an assistant professor and was promoted to associate professor in April 2008. Dr. Ang’s research interests lie mainly in novel semiconductor devices for advanced memory technologies and neuromorphic (non von Neumann) computing and CMOS reliability physics (NBTI, HCI, and TDDB). Together with his Ph.D. student Ms. Ong Yi Ching, their work on the application of scanning probe techniques to study electronic trap generation in high-k gate dielectrics won them the Bronze prize in the 3rd TSMC Outstanding Student Research Award (under the category of Physics, Chemistry of Material for Nano-Scale Devices). In 2017, his joint work with Mr. Tomohito Kawashima from Toshiba won the first prize of the Best Posters Competition of the China Semiconductor Technology International Conference. Dr. Ang was invited to serve on the technical program committees of the IEEE International Reliability Physics Symposium (2004-2006, 2013), International IEEE International Integrated Reliability Workshop (2009-2013) and IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (2004-2015). He also served as a member of the editorial board of the Open Electrical and Electronic Engineering Journal from 2007-2016 and as a guest editor for a topical volume on neuromorphic engineering for Frontiers in Neuroscience.
1. Novel memory technologies (conductive bridge random access memory, ferroelectric memories)
2. Novel semiconductor devices (e.g., optoelectronic memories) for neuromorphic/physical reservoir computing
3. Reliability physics and characterization of nanoscale transistors (negative-bias temperature instability, hot-carrier effects, gate oxide breakdown)
2. Novel semiconductor devices (e.g., optoelectronic memories) for neuromorphic/physical reservoir computing
3. Reliability physics and characterization of nanoscale transistors (negative-bias temperature instability, hot-carrier effects, gate oxide breakdown)
- Enabling Synaptic Logic Transistors by Gate-Dielectric Defect Characterization
- Probing the mechanisms behind the highly repeatable resistive switching of conductive bridge random access memory
US 2018/0166495 A1: Sensor Element, Image Sensor, Methods Of Forming And Operating The Same (2019)
Abstract: A sensor element for sensing optical light may be provided. The sensor element may include a first electrode for electrically coupling to a first supply voltage, a second electrode for electrically coupling to a second supply voltage, and an oxide dielectric element between the first electrode and the second electrode. The oxide dielectric element may be configured to form a conductive filament upon a potential difference between the first supply voltage and the second supply voltage exceeding a threshold level, thereby decreasing a resistance of the oxide dielectric element. The sensor element may also include a detector. The first electrode may be configured to allow the optical light to pass through the first electrode to the oxide dielectric element. The detector may be configured to detect an increase in the resistance of the oxide dielectric element upon the oxide dielectric element receiving the optical light.
Abstract: A sensor element for sensing optical light may be provided. The sensor element may include a first electrode for electrically coupling to a first supply voltage, a second electrode for electrically coupling to a second supply voltage, and an oxide dielectric element between the first electrode and the second electrode. The oxide dielectric element may be configured to form a conductive filament upon a potential difference between the first supply voltage and the second supply voltage exceeding a threshold level, thereby decreasing a resistance of the oxide dielectric element. The sensor element may also include a detector. The first electrode may be configured to allow the optical light to pass through the first electrode to the oxide dielectric element. The detector may be configured to detect an increase in the resistance of the oxide dielectric element upon the oxide dielectric element receiving the optical light.
Awards
1. 1st position for Best Posters Competition, 2017 China Semiconductor Technology International Conference
2. Bronze award for the category “Physics, Chemistry of Materials for Nano-Scale Devices”, 2008 TSMC Outstanding Research Student Competition
2. Bronze award for the category “Physics, Chemistry of Materials for Nano-Scale Devices”, 2008 TSMC Outstanding Research Student Competition
Courses Taught
1. IE1005 From Computational Thinking to Programming
2. EE2103 Semiconductor Fundamentals
3. EE4647 Microelectronic Devices
4. EE4694 IC Reliability and Failure Analysis
2. EE2103 Semiconductor Fundamentals
3. EE4647 Microelectronic Devices
4. EE4694 IC Reliability and Failure Analysis
Supervision of PhD Students
21 Ph.D. students and 6 M.Eng. students have graduated from our lab. We are constantly looking for dedicated Ph.D. student researchers to join us. Please visit our lab (https://ndl-ntu.github.io/) to find out more.