Academic Profile : Faculty

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Assoc Prof Ang Diing Shenp
Associate Professor, School of Electrical & Electronic Engineering
Dr. Ang obtained both his B. Eng. (hons) and Ph.D. degrees in electrical engineering from the National University of Singapore. He joined the School of EEE, NTU in July 2002 as an assistant professor and was promoted to associate professor in April 2008. Dr. Ang’s research interests lie mainly in device reliability physics and characterization. He has recently become interested in the applications of nano-characterization techniques and silicon nanostructures. Together with his graduate student, their work on the application of scanning probe techniques to study electronic trap generation in alternative high-k dielectrics won them the Bronze prize in the category of Physics, Chemistry of Material for Nano-Scale Devices of the 3rd TSMC Outstanding Student Research Award. Dr. Ang was invited to serve on the technical program committees of the International Reliability Physics Symposium from 2004-2006, and has served on the technical program committees nternational Symposium on the Physical and Failure Analysis of Integrated Circuits since 2004.
1. Reliability physics and characterization of nanoscale transistors (negative-bias temperature instability, hot-carrier effects, gate oxide breakdown, low frequency/RF noise, metal gate/high-kappa gate stack, non-volatile memories, silicon-on-insulator transistors, nanowire devices etc.)

2. Nano-characterization techniques (conductive atomic force microscopy, high-resolution transmission electron microscopy and associated anaytical techniques for alternative gate dielectrics, nanowire devices etc.)

3. Characterization of novel devices (e.g. tunneling FETs, novel memories etc.)
  • Enabling Synaptic Logic Transistors by Gate-Dielectric Defect Characterization
US 2018/0166495 A1: Sensor Element, Image Sensor, Methods Of Forming And Operating The Same (2019)
Abstract: A sensor element for sensing optical light may be provided. The sensor element may include a first electrode for electrically coupling to a first supply voltage, a second electrode for electrically coupling to a second supply voltage, and an oxide dielectric element between the first electrode and the second electrode. The oxide dielectric element may be configured to form a conductive filament upon a potential difference between the first supply voltage and the second supply voltage exceeding a threshold level, thereby decreasing a resistance of the oxide dielectric element. The sensor element may also include a detector. The first electrode may be configured to allow the optical light to pass through the first electrode to the oxide dielectric element. The detector may be configured to detect an increase in the resistance of the oxide dielectric element upon the oxide dielectric element receiving the optical light.