Academic Profile

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Dr. Donguk Nam received his Ph.D. (2014) and M.S. (2012) degrees both in Electrical Engineering from Stanford University, and obtained his B.Eng. degree from Korea University (2009). After working as a postdoctoral scholar at Stanford University for one year, he joined Inha University, South Korea, as an Assistant Professor where he led silicon photonics research (SPR) laboratory and advised 11 graduate/undergraduate students from March 2015 to July 2017. In August 2017, he joined the school of EEE at NTU as an Assistant Professor.

In summer of 2016, He was awarded a Tan Chin Tuan Exchange Fellowship to visit Nanyang Technological University as an exchange Professor. His work on highly strained group IV photonic devices has been recognized with several invitations to major conferences/journals including the 2014 & 2016 ECS meetings and Photonics Research journal.
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Asst Prof Nam Donguk
Assistant Professor, School of Electrical & Electronic Engineering

We have "1" openings for PhD scholarship which offers >2,000 SGD monthly allowance. The potential research areas are:
- 2D material-based optoelectronics
- Silicon photonics for medical applications

We are also looking for highly motivated postdoc candidates in the following research areas:
- Silicon/germanium photonics
- Nanolasers using emerging materials
- 2D materials-based optoelectronics
- Quantum photonics (e.g., single photon emitters)

If you are interested, please send your CV to
  • Artificial Low-Dimensional Germanium Nanolaser Enabled by On-Demand Quantum Strain Engineering

  • Crossed Nanobeam Photonic Crystal: Probing the Ultimate Limits of Group-IV Laser

  • Electrically-switchable Skyrmion in Twisted Bilayer Graphene for Spintronics-based Neuromorphic Computing

  • Germanium-Based Materials For Silicon-Compatible Near-IR And Mid-IR Light Source

  • THz Optomechanical CMOS-Compatible Detector With Integrated Germanium Nanolasers
  • S. Gupta, D. Nam, J. Vuckovic and K. Saraswat. (2018). Room Temperature Lasing Unraveled by a Strong Resonance between Gain and Parasitic Absorption in Uniaxially Strained Germanium. Physical Review B (Condensed Matter and Materials Physics), 97, 155127.

  • S. Bao, D. Kim, C. Onwukaeme, S. Gupta, K. Saraswat, K. Lee, Y. Kim, D. Min, Y. Jung, H. Qiu, H. Wang, E. A. Fitzgerald, C. Tan and D. Nam. (2017). Low-Threshold Optically Pumped Lasing in Highly Strained Germanium Nanowires. Nature Communications, 8(1)(1), 1845.

  • J. Petykiewicz, D. Nam, D. Sukhdeo, S. Gupta, S. Buckley, A. Piggott, J. Vučković and K. Saraswat. (2016). Direct Bandgap Light Emission from Strained Ge Nanowire Coupled with High-Q Optical Cavities. Nano Letters, 16(4), 2168-2173.

  • D. Nam, J. Kang, M. Brongersma and K. Saraswat. (2014). Observation of Improved Minority Carrier Lifetimes in High-Quality Ge-on-Insulator Using Time-Resolved Photoluminescence. Optics Letters, 39, 6205-6208.

  • D. Nam, D. Sukhdeo, J. Kang, J. Petykiewicz, J. Lee, W. Jung, J. Vučković, M. Brongersma, and K. Saraswat. (2013). Strain-Induced Pseudoheterostructure Nanowires Confining Carriers at Room Temperature with Nanoscale-Tunable Band Profiles. Nano Letters, 13, 3118-3123.