Academic Profile

T. P. Chen received the B.Sc. and M.Sc. degrees in physics (semiconductors and devices) in 1983 and 1987, respectively, both from Zhongshan (Sun Yat-Sen) University, China, and the Ph.D. degree from The University of Hong Kong in 1994. He is currently a tenured Associate Professor in Division of Microelectronics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore. From Feb. 1990 to Oct.1991, he was a visiting researcher at the Fritz-Haber Institute of Max-Planck Society, Germany. In the years of 1994 to 1997, he was a postdoctoral fellow in The University of Hong Kong and the National University of Singapore, and he also worked in Chartered Semiconductor Manufacturing Ltd for a short period (June – December 1996). He was a senior scientist at PSB Singapore for about two and half years before he joined Nanyang Technological University as an assistant professor in February 2000.

He is the author or coauthor of more than 300 peer-reviewed journal papers (including about 100 papers in Applied Physics Letters, IEEE Transactions on Electron Devices, Journal of Applied Physics, and IEEE Electron Device Letters), more than 130 conference presentations, one book and 6 book chapters. He has filed 15 U.S. patents and 12 Technology Disclosures. He has supervised & co-supervised 26 PhD students, 14 M.Eng./ M.Sc. students (including graduated and current students), and 27 research staff (most of them are post-doctoral researchers). He is a PI & Co-PI of >16 research projects (total grant > S$35M).

He taught the following undergraduate/postgraduate courses (lectures or tutorials) in the past 20+ years in NTU:
E446/EE4646 VLSI Technology; EE6601 Advanced Wafer Processing; EE4613 CMOS Process and Device Simulation; EE4694 IC Reliability and Failure Analysis; EE8067 Ceramics in History, Arts, Gemstones, Environment, and Modern Life; E412/E425/EE4612 Wafer Fabrication and Device Measurement; E202 Analogue Electronics; E281/EE2003 Semiconductor Fundamentals; E313 Integrated Circuits & Semiconductor Processing Technology; EE3003 Integrated Electronics; EE1008 Computing.
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Assoc Prof Chen Tupei
Associate Professor, School of Electrical & Electronic Engineering

Past and current research topics / interests include
1) Nanoscale CMOS devices and reliability physics; ULSI technology;
2) Semiconductor and metal nanocrystals/nanoparticles and their applications in nanoelectronic and photonic devices;
3) Novel memory devices (nanocrystal Flash memory, oxide-based RRAMs/CBRAMs, analog memory, WORM, 1T-DRAM, etc.);
4) Applications of ReRAM/Memristors in AI chips, in-memory computing, FPGA;
5) Si photonic devices (Si-based light emitters, on-chip optical interconnects);
6) Flexible/wearable/transparent devices and applications (transparent/flexible high mobility thin-film transistors / thin film memory / thin film circuits, high-resolution touch panel, electronic skin, large-area flexible x-ray imaging films);
7) Solar energy-related materials and devices (nanostructured spectrally selective absorbing coating for concentrating solar power, anti-reflection coating with capabilities of down-converting UV light and IR rejection for solar cells).
  • Advanced ReRAM Technology For Embedded Systems

  • Transparent projection display via RGB selective scattering and loss compensation
  • Jianxun Sun, Juan Boon Tan, and Tupei Chen, “HfOx-Based RRAM Device With Sandwich-Like Electrode for Thermal Budget Requirement”, IEEE Transactions on Electron Devices, Vol. 67 , No.10 , pp. 4193 – 4200 (Oct. 2020).

  • Yiyang Ye, T. P. Chen, Zhen Liu and Xu Yuan, “Effect of Surface Scattering of Electrons on Ratios of Optical Absorption and Scattering to Extinction of Gold Nanoshell”, Nanoscale Research Letters, Vol.13, pp.299-11 (Sep 2018).

  • J. Zhang, T. P. Chen, Y. C. Liu, Z. Liu, H. Y. Yang, “Modeling of a selective solar absorber thin film structure based on double TiNxOy layers for concentrated solar power applications”, Solar Energy, Vol. 142, pp.33-38 (Jan 2017).

  • H. K. Li, T. P. Chen, P. Liu, S. G. Hu, Y. Liu, Q. Zhang, P. S. Lee, “A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx–Al2O3 thin film structure”, Journal of Applied Physics, Vol.119, No.24, 244505 (June 2016).

  • S. G. Hu, P. Liu, H. K. Li, T. P. Chen, Q. Zhang, L. J. Deng, and Y. Liu, “InGaZnO Thin-Film Transistors With Coplanar Control Gates for Single-Device Logic Applications”, IEEE Transactions on Electron Devices, Vol.63, No.3, pp.1383- 1387 (March 2016).

  • H. K. Li, T. P. Chen, S. G. Hu, P. Liu, Y. Liu, P. S. Lee, X. P. Wang, H. Y. Li, and G. Q. Lo, “Study of Multilevel High-Resistance States in HfOx-Based Resistive Switching Random Access Memory by Impedance Spectroscopy”, IEEE Transactions on Electron Devices, Vol. 62, No. 8, pp.2684-2688 (August 2015).

  • X. D. Li, T. P. Chen, Y. Liu, and K. C. Leong, “Influence of localized surface plasmon resonance and free electrons on the optical properties of ultrathin Au films: a study of the aggregation effect”, Optics Express, Vol. 22, No. 5 , pp. 5124-5132 (March 2014).

  • Z. H. Cen, T. P. Chen, Z. Liu, Y. Liu, L. Ding, M. Yang, J. I. Wong, S. F. Yu, W. P. Goh, “Electrically tunable white-color electroluminescence from Si-implanted Silicon nitride thin film”, Optics Express, Vol. 18, No.19, pp.20439-20444 (2010).

  • E. S. M. Goh, T. P. Chen, C. Q. Sun and Y. C. Liu, “Thickness Effect on the Band Gap and Optical Properties of Germanium Thin Films”, Journal of Applied Physics, Vol.107, pp.024305 -5 (2010).

  • C. Y. Ng, T P Chen, M. Yang, J. B. Yang, L. Ding, C. M. Li, A. Du and A. Trigg, “Impact of programming mechanisms on performance and reliability of non-volatile memory devices based on Si nanocrystal”, IEEE Transactions on Electron Devices, vol. 53, no. 4, pp.663-667 (2006).