Academic Profile : Faculty

Liu Zheng.jpg picture
Prof Liu Zheng
Professor, School of Materials Science & Engineering
Materials Research Society of Singapore Chair in Materials Science and Engineering
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Dr. Zheng Liu received his B.S. degrees (2005) at Nankai University (China), and completed his Ph.D at National Center for Nanoscience and Technology (NCNST), China, under the guidance of Prof. Lianfeng Sun. He then worked in Prof. Pulickel M. Ajayan and Prof. Jun Lou’s groups as a joint postdoc research fellow (2010~2012) and research scientist (2012~2013) at Rice University. Dr. Zheng Liu's research focus on the synthesis, characterizations and applications of novel two-dimensional (2D) crystals, including nitrides (hexagonal boron nitride, h-BN), oxides, transition metal dichalcogenides (TMDs, MoS2, WS2, MoSe2 etc.) He has made great contributions to the 2D materials based nanoelectronics, active nano-systems and high performance energy components, e.g. graphene/h-BN resonators, graphene photodetectors, high-density capacitors, ultrafast lithium storage. He has published more than 50 peer-reviewed papers in top journals such as Nat Mater, Nat Nanotech, Nat Comm, Nano Lett, Adv Mater, JACS, ACS Nano, Small etc. These work have been reported by the impact media such as Science daily, IEEE spectrum etc., and highlighted by the top journals such as Nat Phys, Nat Nanotech, Chem Int Ed, etc. He was a recipient of the 2012 World Technology Award in Energy category. This award has been presented as a way to honor those in doing "the innovative work of the greatest likely long-term significance." He was awarded the Singapore NRF Fellowship in 2013.
Synthesis of large-scale and high-quality two-dimensional (2D) materials, e.g. graphene, hexagonal boron nitrides (h-BN), transition metal dichalcogenides (TMDs); Synthesis of ternary 2D materials such as h-BNC and doped TMDs; Hybridized architectures of 2D materials; Applications of 2D materials on high-performance optical and electronic devices.
  • Advancing van der Waals Heterostructures for High Frequency Tunnel Devices
  • Atomically thin Sensitive InfrAred photodetectors based on platinum diselenide (PtSe2)
  • Capping single-atom catalyst for ultra-high electrocatalytic performance and durability
  • Extremely high-density grain boundary of wafer-size atom-thin materials for hydrogen production
  • In-situ electrochemical/electronic measurement for semiconductor catalysis
  • Integrated On-chip Planar Coherent Light Sources
  • Kirigami-inspired metamaterials with plasmonic thermochromic vanadium dioxide
  • Materials design and discovery of van der Waals topological magnets
  • Materials Research Society of Singapore Chair in Materials Science and Engineering (Liu Zheng)
  • Negative capacitance transistor for flexible and wearable electronics
  • Unconventional Magnetism and Magneto-transport in Chiral Metallic Magnets
US 2019/0194797 A1: Chalcogenide Film, Device Including, And Method Of Forming The Same (2021)
Abstract: A chalcogenide film is provided. The chalcogenide film includes a noble metal chalcogenide material having a formula MCx. M represents a noble metal. C represents a chalcogen. x is any one positive value equal to or more than 1.4 and less than 2. The chalcogenide film is configured to generate electrons and holes upon light incident on the chalcogenide film.