Academic Profile : Faculty

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Prof Wang Qijie
Associate Chair (Research), School of Electrical & Electronic Engineering
Professor, School of Electrical & Electronic Engineering
Professor, School of Physical & Mathematical Sciences
External Links
Dr. WANG Qijie received the B.E. degree in electrical engineering from the University of Science and Technology of China (USTC), Hefei China, in 2001 graduating one year in advance; and the Ph.D degree in electrical and electronic engineering from Nanyang Technological University, Singapore, in 2005, with NTU and Singapore Millennium Foundation (SMF) scholarship. After completing his Ph.D, he obtained the 2005 SMF postdoctoral fellowship working in NTU. Then he joined School of Engineering and Applied Science, Harvard University, as a postdoctoral researcher in Jan. 2007. In October 2009, he was appointed as a joint Nanyang Assistant Professor at the School of Electrical and Electronic Engineering (EEE) and the School of Physical and Mathematical Sciences (SPMS). Since Sep. 2018, he has been promoted to tenured full professor in school of EEE and SPMS, NTU. He is an OSA (the Optical Society) Fellow.

Dr. Wang has published/co-published more than 180 papers in top international journals (like Nature, Science, Nature Photonics, Nature Nanotechnology, Nature Materials, and Nature Communications) and co-authored more than 10 U.S. patents. He was the recipient of the top prize for the Young Inventor Awards of the SPIE Photonics Europe Innovation Village in 2004; a golden award from the Fifth Young Inventor’s Awards in 2005 organized by HP and Wall Street Journal; and the co-recipient of the IES (Institution of Engineers Singapore) Prestigious Engineering Achievement Team Award of Singapore Twice in 2005 and 2017, respectively, 30th World Culture Special Recognition Award 2013, the prestigious Singapore Young Scientist Award 2014, and Nanyang Research Award 2015 (Young Investigator).
My current research interests are to explore theoretically and experimentally nano-structured semiconductors, and nanophotonic devices (nanoplasmonics, photonic crystals and metamaterials) with an emphasis on all aspects of the problem: from design, fabrication, characterization, to integration at system level.

In particular, I am going to investigate the fundamental properties (optical and electrical) of semiconductor (quantum cascade lasers) and nanophotonic devices (such as 2D material based optoelectronic devices) in the infrared frequency regimes (including near-IR (~1.5um), mid-IR (~3-30 um) and Terahertz (~60-300 um)) to improve their performance. Exploration of their broad potential applications is also one of the key focuses.

We are always looking for strongly motivated both postdoc and Ph.D researchers dedicated to the cutting edge research in semiconductor lasers, 2D material optoelectronics, nanotechnology, and nano-optics/photonics. Interested candidates please send your CV to Shortlisted candidates will be contacted.

Currently we have several postdoc positions available on the development of high performance mid-infrared and Terahertz lasers and photodetectors, and 2D material optoelectronics.

Group Website:
  • CoE Research Award 2022
  • Exploring Spectroscopy of Quantum Degenerate One-Dimensional Electrons and Their Device Applications
  • Future Communications Research & Development Scholarship Programme
  • Germanium-Based Materials For Silicon-Compatible Near-IR And Mid-IR Light Source
  • IDMxS - Visiting and Travel
  • Institute for Digital Molecular Analytics and Science (IDMxS)
  • Mass-Producible Mid-IR Metasurfaces for Wide-field Super-resolution Hyperspectral Imaging
  • Miniaturized Laser Sensors for Air Quality Sensors Augmenting Smart Urban Mobility
  • Nanoantenna Spatial Light Modulators for Next-Gen Display Technologies (NSLM)
  • Smart Portable Infrared Spectrometer For Rapid Pathogen Detection of Infectious Diseases
  • The Photonics Era
  • Ultrafast high energy fibre laser for invasive bio-imaging applications
US 2019/0194797 A1: Chalcogenide Film, Device Including, And Method Of Forming The Same (2021)
Abstract: A chalcogenide film is provided. The chalcogenide film includes a noble metal chalcogenide material having a formula MCx. M represents a noble metal. C represents a chalcogen. x is any one positive value equal to or more than 1.4 and less than 2. The chalcogenide film is configured to generate electrons and holes upon light incident on the chalcogenide film.

US 2018/0138661 A1: Light Source And Method For Controlling The Same (2020)
Abstract: Embodiments provide a light source having a coherent light generator arrangement configured to generate at least one output light, and a waveguide arrangement optically coupled to the coherent light generator arrangement, the waveguide arrangement including at least one first resonator element and at least one second resonator element arranged in different orientations, wherein the waveguide arrangement is configured to interact with the at least one output light to cause the at least one first resonator element and the at least one second resonator element to emit respective first and second optical signals to co-operatively interact with each other to generate an output optical signal, and wherein the light source is configured to change a polarization characteristic of the output optical signal in response to at least one electrical signal applied to the light source to vary at least one of respective magnitudes of the first and second optical signals relative to each other.

US 2016/0141835 A1: Laser and Integrated Graphene Modulator (2017)
Abstract: According to various embodiments, there is provided a layer arrangement including a graphene layer; a gating electrode layer configured to provide a tuning voltage to the graphene layer; a laser layer configured to provide an electromagnetic wave; and a concentric-circular grating layer configured to couple the electromagnetic wave to the graphene layer.

US 2016/0005894 A1: Method Of Manufacturing A Monolayer Graphene Photodetector And Monolayer Graphene Photodetector (2017)
Abstract: In various embodiments of the present disclosure, there is provided a method of manufacturing a monolayer graphene photodetector, the method including forming a graphene quantum dot array in a graphene monolayer, and forming an electron trapping center in the graphene quantum dot array. Accordingly, a monolayer graphene photodetector is also provided.