Academic Profile

Profile: https://sites.google.com/site/khanti/home

LinkedIn Profile: https://www.linkedin.com/in/chuan-seng-tan-a4b62216/

Chuan Seng Tan (SMIEEE, FIMAPS) received his B.Eng. degree in electrical engineering from University of Malaya, Malaysia, in 1999. Subsequently, he completed his M.Eng. degree in advanced materials from the National University of Singapore under the Singapore-MIT Alliance (SMA) program in 2001. He then joined the Institute of Microelectronics, Singapore, as a research engineer where he worked on process integration of strained-Si/relaxed-SiGe heterostructure devices. In the fall of 2001, he began his doctoral work at the Massachusetts Institute of Technology, Cambridge, USA, and was awarded a Ph.D. degree in electrical engineering in 2006. He was the recipient of the Applied Materials Graduate Fellowship for 2003-2005. In 2003, he spent his summer interning at Intel Corporation, Oregon.

He joined NTU in 2006 as a Lee Kuan Yew Postdoctoral Fellow and since July 2008, he was a holder of the inaugural Nanyang Assistant Professorship. In March 2014, he was promoted to the rank of Associate Professor (with tenure). In September 2019, he was promoted to the rank of Full Professor. His research interests are semiconductor process technology and device physics. Currently he is working on process technology of three-dimensional integrated circuits (3-D ICs), as well as engineered substrate (Si/Ge/Sn) for group-IV photonics. He has numerous publications (journal and conference) and IPs on 3-D technology and engineered substrates. Nine of his inventions have since been licensed to a spin-off company. He co-edited/co-authored five books on 3D packaging technology.

He provides his service as committee member for International Conference on Wafer Bonding, IEEE-3DIC, IEEE-EPTC, IEEE-ECTC, IEEE-EDTM, IEEE-GFP and ECS-Wafer Bonding. He is an associate editor for Elsevier Microelectronics Journal (MEJ) and IEEE Transactions on Components, Packaging and Manufacturing Technology . He is a senior member of IEEE and a recipient of the 2019 Exceptional Technical Achievement Award from the IEEE Electronics Packaging Society (EPS). Beginning June 2019, he is a Distinguished Lecturer with IEEE-EPS. He is a Fellow of the International Microelectronics Assembly and Packaging Society (IMAPS) since 2019 and a recipient of the William D. Ashman - John A. Wagnon Technical Achievement Award in 2020.

Check out a recent demonstration of a 3D MEMS-CMOS chip (for motion sensing) designed, fabricated and packaged in his group: http://www.youtube.com/watch?v=zpYXEEsE2_E

Check out a project by his students on bicycle phone charger: http://youtu.be/KQptIDgOaGQ
tancs_1_2.JPG picture
Prof Tan Chuan Seng
Associate Dean (Academic), College of Engineering
Professor, School of Electrical & Electronic Engineering

3D packaging and integration (for Quantum Computing and Edge Computing)
Group-IV hetero-epitaxy (Si, Ge, Sn), engineered substrate and devices
Group-IV photonics
III-V/Ge/Si integration

If you are interested in PhD study or post-doc positions (3D packaging for quantum computing, group-IV Ge photonics communication and sensing), please contact tancs@ntu.edu.sg
 
  • Artificial Low-Dimensional Germanium Nanolaser Enabled by On-Demand Quantum Strain Engineering

  • Compact and Low Cost Molecular Sensing Platform with Germanium Photonics

  • Development of Wafer Scale Abrupt Semiconductor Hetero-junctions with Defect-free Interfaces for Next Generation Electronic and Photonic Applications

  • Germanium-Based Materials For Silicon-Compatible Near-IR And Mid-IR Light Source

  • High-Detectivity Germanium Photodiodes for Short-Wave Infrared Imaging

  • Hybrid Ion-Traps for Quantum Computing: Embedded-Glass Ion-Trap on Si Interposer for Large Scale Integration (HIT)

  • Nanosystems at the Edge

  • Project GaN-on-DIAMOND EPITAXY

  • Study of Copper Wire Bond Reliability Under Biased Humidity Stress Tests
 
  • L. Zhang, L. Peng, H. Y. Li, G. Q. Lo, D. L. Kwong, and C. S. Tan. (2012). Operating TSV in Stable Accumulation Capacitance Region by Utilizing Al2O3-Induced Negative Fixed Charge. IEEE Electron Device Letters, , 10.1109/LED.2012.2190968.

  • Y. H. Tan, G. Y. Chong, and C. S. Tan. (2012). Direct bonding of Ge-Ge using epitaxially grown Ge-on-Si wafers. ECS Journal of Solid State Science and Technology, , DOI: 10.1149/2.017201jss.

  • J. Fan, L. Peng, K. H. Li, and C. S. Tan. (2012). Wafer-Level Hermetic Packaging of 3D Microsystems with Low Temperature Cu-to-Cu Thermo-compression Bonding and Its Reliability. Journal of Micromechanics and Microengineering, , doi:10.1088/0960-1317/22/10/105004.

  • Zhang, R. I Made, H.Y. Li, S. Gao, G. Q. Lo, D. L. Kwong, and C. S. Tan. (2011). Spatial Variation of TSV Capacitance and Method of Stabilization with Al2O3-Induced Negative Fixed Charge at the Silicon-Liner Interface. IEEE International Electron Devices Meeting (IEDM).

  • L. Peng, H. Y. Li, D. F. Lim, S. Gao, and C. S. Tan. (2011). High Density 3D Interconnect of Cu-Cu Contacts with Enhanced Contact Resistance by Self-Assembled Monolayer (SAM) Passivation. IEEE Transactions on Electron Devices, , 10.1109/TED.2011.2156415.