Highly Cited
Chen, K. N., Tan, C. S., Fan, A., & Reif, R. (2004). Morphology and bond strength of copper wafer bonding. Electrochemical and Solid-State Letters, 7(1). doi: 10.1149/1.1626994

Tan, C. S., Lim, D. F., Singh, S. G., Goulet, S. K., & Bergkvist, M. (2009). Cu–Cu diffusion bonding enhancement at low temperature by surface passivation using self-assembled monolayer of alkane-thiol. Applied Physics Letters, 95. doi: 10.1063/1.3263154

Bao, S., Kim, D., Onwukaeme, C., Gupta, S., Saraswat, K., Lee, K. H., ... Nam, D. (2017). Low-threshold optically pumped lasing in highly strained germanium nanowires. Nature Communications, 8, 1845. doi: 10.1038/s41467-017-02026-w

Chen, K. N., Fan, A., Tan, C. S., & Reif, R. (2004). Contact resistance measurement of bonded copper interconnects for three-dimensional integration technology. IEEE Electron Device Letters, 25(1), 10-12. doi: 10.1109/LED.2003.821591

Chen, K. N., Fan, A., Tan, C. S., & Reif, R. (2002). Microstructure evolution and abnormal grain growth during copper wafer bonding. Applied Physics Letters, 81, 3774. doi: 10.1063/1.1521240

Tan, C. S., & Reif, R. (2005). Silicon multilayer stacking based on copper wafer bonding. Electrochemical and Solid-State Letters, 8(6). doi: 10.1149/1.1904506

Chen, K. N., Fan, A., Tan, C. S., & Reif, R. (2006). Bonding parameters of blanket copper wafer bonding. Journal of Electronic Materials, 35, 230–234. doi: 10.1007/BF02692440

Chen, K. N., Tan, C. S., Fan, A., & Reif, R. (2005). Copper bonded layers analysis and effects of copper surface conditions on bonding quality for three-dimensional integration. Journal of Electronic Materials, 34, 1464–1467. doi: 10.1007/S11664-005-0151-0

Tan, Y. H., & Tan, C. S. (2012). Growth and characterization of germanium epitaxial film on silicon (001) using reduced pressure chemical vapor deposition. Thin Solid Films, 520(7), 2711-2716. doi: 10.1016/J.TSF.2011.11.046

Lee, K. H., Bao, S., Chong, G. Y., Tan, Y. H., Fitzgerald, E. A., & Tan, C. S. (2014). Fabrication and characterization of germanium-on-insulator through epitaxy, bonding, and layer transfer. Journal of Applied Physics, 116, 103506. doi: 10.1063/1.4895487

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Recent Publication:
Loke, W. K., Wang, Y., Gao, Y., Khaw, L., Lee, K. E. K., Tan, C. S., ... & Yoon, S. F. (2022). In0.3Ga0.7As heterojunction bipolar transistor grown on GeSi substrate for high-frequency application. Materials Science in Semiconductor Processing, 146, 106663. doi: 10.1016/j.mssp.2022.106663

Jung, Y., Burt, D., Zhang, L., Kim, Y., Joo, H. J., Chen, M., ... & Nam, D. (2022). Optically pumped low-threshold microdisk lasers on a GeSn-on-insulator substrate with reduced defect density. Photonics Research, 10(6), 1332-1337. doi: 10.1364/PRJ.455443

Son, B., Lin, Y., Lee, K. H., Margetis, J., Kohen, D., Tolle, J., & Tan, C. S. (2022). Metal-semiconductor-metal photodetectors on a GeSn-on-insulator platform for 2 µm applications. IEEE Photonics Journal, 14(3), 1-6. doi: 10.1109/JPHOT.2022.3164943

Burt, D., Joo, H. J., Kim, Y., Jung, Y., Chen, M., Luo, M., ... & Nam, D. (2022). Direct bandgap GeSn nanowires enabled with ultrahigh tension from harnessing intrinsic compressive strain. Applied Physics Letters, 120(20), 202103. doi: 10.1063/5.0087477

Chen, Q., Wu, S., Zhang, L., Zhou, H., Fan, W., & Tan, C. S. (2022). Transferable single-layer GeSn nanomembrane resonant-cavity-enhanced photodetectors for 2 μm band optical communication and multi-spectral short-wave infrared sensing. Nanoscale, 14(19), 7341-7349. doi: 10.1039/d1nr07293e