Academic Profile : Faculty

Assoc Prof Teo Hang Tong Edwin .jpg picture
Assoc Prof Teo Hang Tong Edwin
Director, Temasek Laboratories @ NTU
Associate Professor, School of Electrical & Electronic Engineering
Associate Professor, School of Materials Science & Engineering
External Links
Dr. Teo received his BEng degree and his Ph.D. in Electrical and Electronic Engineering (EEE) from Nanyang Technological University (NTU) in 2004 and 2009 respectively. He was a postdoctoral fellow at the Solid State Institute and Russell Berrie Nanotechnology Institute at the Technion in 2008-10. In 2010, he was awarded the Nanyang-DSO Post-Doctoral Fellowship at Temasek Laboratories@NTU. In Dec 2012 he joined NTU as an Assistant Professor at the School of EEE.
1. Nano-composites and hybrid materials
2. BN nanostructured materials including 1D nanodots, 2D h-BN, 3D BN foams and thin films
3. Re-ordering of chaotic materials
4. Phase-Change Materials
5.Thermal Interface Materials
6.Thermal management through both top-down and bottom-out approach
7. Space Materials
8. Bio-Materials
  • CCF CALT Sub-Project 2A- Development of diamond sub-mount and TIM
  • Core Team in Temasek Laboratories at NTU
  • Development of Wafer Scale Abrupt Semiconductor Hetero-junctions with Defect-free Interfaces for Next Generation Electronic and Photonic Applications
  • Fabrication of ultra-pure ‘quantum grade’ diamond via MPCVD
  • Processing and Characterization of Diamond Crystals
  • Project REPULSOR- Diamond-carbon nanostructural composites for thermal management and propulsion of small satellites
  • Resonant Tunneling through 2D and Quasi-2D Interface: Physics and Multi-functional Quantum Tunneling Technology
  • Thrust C: Smart Materials and Communication Technologies (IAF-ICP)
  • Thrust C: Smart Materials and Communication Technologies (RCA)
  • TL@NTU Innovation Grant 2022
  • Ultrathin Film for Multipactor Elimination in High Power RF Equipment for the Miniaturisation of SmallSats
  • VLEO Remote Sensing
  • VLEO Remote Sensing - Material
US 2019/0093217 Al: Chemical Vapor Deposition Process To Build 3D Foam-Like Structures (2021)
Abstract: A chemical vapor deposition process comprising heating a porous metal template at a temperature range of 500 to C.; and passing a gas mixture comprising a carrier gas carrying along a vapor of an organometallic compound and at least one of a carbon precursor gas and a boron nitride precursor gas through the heated metal template is provided. The heating temperature causes the decomposition of the organometallic compound vapor into metal particles, the carbon precursor gas into graphene domains, and/or the boron nitride precursor gas into hexagonal-boron nitride domains. The graphene domains and/or the hexagonal-boron nitride domains nucleate and grow on the metal particles and the metal template to form a three-dimensional interconnected porous network of graphene and/or the hexagonal-boron nitride. A foam-like structure produced by a process as described above is also provided. A foam-like structure as described above for use in electrochemistry, solar cells, filler, thermal interface material, sensing or biological applications is further provided.

US 2019/0016600 A1: Boron Nitride Material And Method Of Preparation Thereof (2019)
Abstract: A method of preparing a boron nitride material, such as boron nitride (BN) or boron carbonitride (BCN), is provided. The method may include providing a substrate, and sublimating an amine borane complex onto the substrate to obtain the boron nitride material. The amine borane complex may include, but is not limited to, borazine, amino borane, trimethylamine borane and triethylamine borane. In addition, the temperature at which the sublimating is carried out may be varied to control composition of the boron nitride material formed. In addition, various morphologies can be obtained by using the present method, namely films, nanotubes and porous foam.