Academic Profile

Prof Zhou Xing has been with the School of Electrical and Electronic Engineering since he joined NTU in 1992. He obtained his BEng degree in electrical engineering from Tsinghua University in 1983, MS and PhD degrees in electrical engineering from the University of Rochester in 1987 and 1990, respectively. His past research interests include Monte Carlo simulation of photocarrier transport and ultrafast phenomena as well as mixed-mode circuit simulation and CAD tool development. His recent research focuses on nanoscale CMOS compact model development. His research group has been developing a unified core model for nanoscale bulk, SOI, double-gate, nanowire CMOS, as well as III-V HEMTs. He has given more than 140 IEEE EDS distinguished lectures and invited talks at various universities as well as industry and research institutions. He is the founding chair for the Workshop on Compact Modeling (WCM) in association with the NSTI Nanotechnology Conference since 2002. Dr. Zhou was an editor for the IEEE Electron Device Letters during 2007–2016, a guest Editor-in-Chief for the special issue of the IEEE Transactions on Electron Devices (Feb. 2014) on compact modeling of emerging devices, and a member of the Modeling & Simulation subcommittee for IEDM (2016, 2017). He has been an EDS distinguished lecturer since 2000.
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Assoc Prof Zhou Xing
Associate Professor, School of Electrical & Electronic Engineering

Prof Zhou Xing's areas of expertise are semiconductor device physics, modeling, simulation, technology CAD, mixed-signal CAD, Monte Carlo, ultrafast phenomena. His current research works focus on nanoscale compact model development for bulk/SOI/multigate/nanowire CMOS and III-V HEMTs.
  • Advanced ReRAM Technology For Embedded Systems

  • Compact Modeling For Novel III-V Devices And III-V/Si Hybrid PDK Development

  • Exploring the Physics and Novel Operation of Semiconductor Junctions
  • A. Ajaykumar, X. Zhou, and S. B. Chiah. (2017). A New Interpretation for the Anomalous Channel-Length Dependence of Low-Frequency Noise in Quasi-Ballistic Transistors. IEEE Electron Device Letters, 38(8), 1113–1116.

  • A. Ajaykumar, X. Zhou, S. B. Chiah, and B. Syamal. (2017). Impact of Subthreshold Carrier Statistics on the Low-Frequency Noise in MOSFETs. IEEE Transactions on Electron Devices, 64(4), 1702–1707.

  • N. Ge, J. H. Yoon, M. Hu, E. J. Merced-Grafals, N. Davila, J. P. Strachan, Z. Li, H. Holder, Q. Xia, R. S. Williams, X. Zhou, and J. J. Yang. (2017). An efficient analog Hamming distance comparator realized with a unipolar memristor array: a showcase of physical computing. Scientific Reports, 6, 40135.

  • A. Ajaykumar, X. Zhou, S. B. Chiah, and B. Syamal. (2016). Quasi-2D Surface-Potential-Based Critical Length for Drift-Diffusion to Quasi-Ballistic Transport. IEEE Electron Device Letters, 37(8), 1051–1054.

  • B. Syamal, X. Zhou, S. B. Chiah, M. J. Anand, S. Arulkumaran and G. I. Ng. (2016). A Comprehensive Compact Model for GaN HEMTs, Including Quasi-Steady-State and Transient Trap-Charge Effects. IEEE Transactions on Electron Devices, 63(4), 1478.