Academic Profile : Faculty

Radha NUS.jpg picture
Assoc Prof K Radhakrishnan
Associate Professor, School of Electrical & Electronic Engineering
Journal Articles
(Not applicable to NIE
staff as info will be
pulled from PRDS)
R. Lingaparthi, N. Dharmarasu, K. Radhakrishnan, and Y. Zheng, “Effects of Si doping well beyond Mott transition limit in GaN epilayers grown by plasma-assisted molecular beam epitaxy”, J. Phys. D: Appl. Phys. 55 095110 (2021)

R. Lingaparthi, N. Dharmarasu, K. Radhakrishnan, A. Ranjan, Tian Long Alex Seah**, “Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures,” Applied Physics Letters 118, 122105 (2021).

García-Sánchez, Sergio; Iniguez de la Torre, Ignacio; Perez, Susana; Ranjan, Kumud; Agrawal, Manvi, Lingaparth, Ravikiran, Dharmarasu, Nethaji; Radhakrishnan, K; Subramanium, Arulkumaran; Ng, Geok Ing; Gonzalez, Tomas; Mateos, Javier, Non-linear thermal resistance model for the simulation of high power GaN-based devices, Semiconductor Science and Technology 36 055002 (7pp) (2021)

A. Ranjan R. Lingaparthi, N. Dharmarasu, K. Radhakrishnan, “Enhanced NO2 Gas Sensing Performance of Multigate Pt/AlGaN/GaN High Electron Mobility Transistors,” Journal of the Electrochemical Society 168, 047502 (2021).

R. Lingaparthi, N. Dharmarasu, K. Radhakrishnan, M. Agrawal, In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applications, Thin Solid Films 708 (2020) 138128.

S Patwal, M Agrawal, K Radhakrishnan, TLA Seah, N Dharmarasu. Enhancement of 2D Electron Gas Mobility in an AlN/GaN/AlN Double-Heterojunction High-Electron-Mobility Transistor by Epilayer Stress Engineering. Physica Status Solidi A -Applications and Materials Science, 1900818, 1-7 (2019).

Yi Zheng; Manvi Agrawal; Nethaji Dharmarasu, Radhakrishnan K; Shashank Patwal. A study on Ga-Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy. Applied Surface Science, 481, 319-326. (2019).

B Dror, Y Zheng, M Agrawal, K Radhakrishnan, M Orenstein, G Bahir. (2019). Mid-Infrared GaN/AlGaN Quantum Cascade Detector Grown on Silicon. IEEE Electron Device Letters, 40(2), 263-266 (2019).

A. Ranjan, M. Agrawal, K. Radhakrishnan and N. Dharmarasu. AlGaN/GaN HEMT based high-sensitive NO2 gas sensors. Japanese Journal of Applied Physics, 58, SCCD23 (2019).