Academic Profile : Faculty
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Prof Ng Geok Ing
Professor, School of Electrical & Electronic Engineering
Programme Director, Centre of Microsystem Technology, Temasek Laboratories at NTU (TL@NTU)
Email
Journal Articles
(Not applicable to NIE
staff as info will be
pulled from PRDS)
(Not applicable to NIE
staff as info will be
pulled from PRDS)
Weichuan Xing, Zhihong Liu, Haodong Qiu, Kumud Ranjan, Yu Gao, Geok Ing Ng and Tomas Palacios. (2018). InAlN/GaN HEMTs on Si with high fT of 250 GHz. IEEE Electron Device Letters, 39(1), 75-78.
Weichuan Xing, Zhihong Liu, Haodong Qiu, Geok Ing Ng, Tomás Palacios. (2017). Planar-Nanostrip-Channel InAlN/GaN HEMTs on Si With Improved gm and fT Linearity. IEEE Electron Device Letters, 38(5), 619-622.
S. Arulkumaran, G. I. Ng, K. Ranjan, C. M. Manoj Kumar, S. C. Foo, K. S. Ang, S. Vicknesh, S. B. Dolmanan and S. Tripathy. (2015). Record Low Contact Resistance for InAlN/GaN HEMTs on Si with Non-Gold metal. Japanese Journal of Applied Physics, .
S. Arulkumaran, G. I. Ng, C. M. Manojkumar, K. Ranjan, K. L. Teo, O. F. Shoron, S. Rajan, S. B. Dolmanan and S. Tripathy. (2014). In0.17Al0.83N/AlN/GaN Triple T-shape Fin-HEMTs with gm=646 mS/mm, Ion=1.03 A/mm, Ioff=1.13 µA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V. International Electron Devices Meeting. IEDM (Year), , 594.
S. Tripathy, Vivian K. X. Lin, S. B. Dolmanan, Joyce P. Y. Tan, R. S. Kajen,L. K. Bera, S. L. Teo, M. Krishna Kumar, S. Arulkumaran, G. I. Ng, S. Vicknesh, Shane Todd, W. Z. Wang, G. Q. Lo, H. Li,, D. Lee, and S. Han. (2012). AlGaN/GaN two-dimensional –electron-gas heterostructure on 200mm diameter Si(111). Applied Physics Letters, .
Weichuan Xing, Zhihong Liu, Haodong Qiu, Geok Ing Ng, Tomás Palacios. (2017). Planar-Nanostrip-Channel InAlN/GaN HEMTs on Si With Improved gm and fT Linearity. IEEE Electron Device Letters, 38(5), 619-622.
S. Arulkumaran, G. I. Ng, K. Ranjan, C. M. Manoj Kumar, S. C. Foo, K. S. Ang, S. Vicknesh, S. B. Dolmanan and S. Tripathy. (2015). Record Low Contact Resistance for InAlN/GaN HEMTs on Si with Non-Gold metal. Japanese Journal of Applied Physics, .
S. Arulkumaran, G. I. Ng, C. M. Manojkumar, K. Ranjan, K. L. Teo, O. F. Shoron, S. Rajan, S. B. Dolmanan and S. Tripathy. (2014). In0.17Al0.83N/AlN/GaN Triple T-shape Fin-HEMTs with gm=646 mS/mm, Ion=1.03 A/mm, Ioff=1.13 µA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V. International Electron Devices Meeting. IEDM (Year), , 594.
S. Tripathy, Vivian K. X. Lin, S. B. Dolmanan, Joyce P. Y. Tan, R. S. Kajen,L. K. Bera, S. L. Teo, M. Krishna Kumar, S. Arulkumaran, G. I. Ng, S. Vicknesh, Shane Todd, W. Z. Wang, G. Q. Lo, H. Li,, D. Lee, and S. Han. (2012). AlGaN/GaN two-dimensional –electron-gas heterostructure on 200mm diameter Si(111). Applied Physics Letters, .