Academic Profile : Faculty

Si COE Director (002).png picture
Prof Ng Geok Ing
Professor, School of Electrical & Electronic Engineering
Principal Scientist II and Centre Director, National GaN Technology Center (NGTC), School of Electrical & Electronic Engineering
Programme Director, Centre of Microsystem Technology, Temasek Laboratories at NTU (TL@NTU)
 
NG Geok Ing received his Ph.D degree in electrical engineering from the University of Michigan, Ann Arbor in 1990. From 1991 to 1993, he was a Research Fellow at the Centre for Space Terahertz Technology in the University of Michigan, working on microwave/ millimeter-wave semiconductor devices and MMICs. In 1993, he joined TRW Inc. in Space Park, California as a Senior Member of Technical Staff engaging in the R&D work on GaAs and InP-based HEMTs for high frequency low-noise and power MMIC applications.

Since joining the Nanyang Technological University (NTU) Singapore in the School of EEE in 1995, he has held several key appointments including Head of the Microelectronics Division, Founding Programme Manager of the MMIC Design Centre at the Temasek Laboratories@NTU (TL@NTU) and Director of the Silicon Centre of Excellence (Si COE). He is also the co-founder of DenseLight Semiconductor Pte Ltd. Which is a NTU spin-off company. Currently, he holds joint appointment with the A*Star Institute of Microelectronics serving as the Centre Director of the National GaN Technology Centre (NGTC). He also holds concurrent appointments as the Programme Director of the Centre for Microsystem Technologies (CMT) at the Temasek Laboratories@NTU and the Director of the Centre for Micro- and NanoElectronics (CMNE) in the School of EEE.

His current research specializations include (1) Gallium Nitride (GaN) High-Electron-Mobility Transistors (HEMTs) and (2) III-V compound semiconductor devices for high-frequency and Monolithic Microwave Integrated Circuit (MMIC) applications . He has authored and co-authored more than 300 international journal and conference papers and delivered plenary and invited talks at several international conferences. He holds two granted patents and 5 filed patents.
Currently, he serves as the member of the IEEE Electron Device Society Board of Governors, Editor of the IEEE Journals of Electron Device Society (JEDS) and Editorial Board Member of the open access journal Electronics. He also serves in the Steering Committee of the 2023 Electron Devices Technology and Manufacturing (EDTM).

In 1990, he was awarded the European Microwave Prize for his work on InP-based heterostructure monolithic amplifiers. In 1994, he received the TRW Roll of Honor award on the Independent R&D project on Millimeter-Wave Power Devices. In 2007, he was awarded the prestigious Singapore’s Defense Technology Prize for his outstanding technological contributions in MMIC R&D.
Current research interests include (1) Gallium Nitride (GaN) High-Electron-Mobility Transistors (HEMTs) and (2) III-V compound semiconductor devices for high-frequency and Monolithic Microwave Integrated Circuit (MMIC) applications .
 
  • Development of “All GaN” logic integrated circuits via a 3D integration of AlGaN/GaN HEMTs
  • Eastern Jewel
  • Eastern Jewel - Task B: Process development for the demonstration of VCSEL
  • EMME
  • LEES+ Monolithic CMOS + GaN HEMT Integrated Circuits for 5G and Beyond
  • Low-Voltage Bias GaN-on-Si for Mobile Applications
  • MC-HEMT
  • MC-HEMT Device Fabrication & MC-HEMT Circuit Evaluation
  • National GaN Technology Centre (NGTC) – NTU
  • Project PECORINO
  • Work Package 1: Device Fabrication
  • WP 3 and 4.1: Development of High-frequency GaN HEMTs on Silicon