Academic Profile : Faculty

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Prof Zhang Qing
Professor, School of Electrical & Electronic Engineering
Qing Zhang received his Bachelor Degree from Lanzhou University, China in 1982, Master Degree from Chinese Academy of Sciences, China in 1987 and Ph.D from Kanazawa University, Japan in 1995. He joined School of EEE in 1996. Currently, he is teaching physics foundation (quantum physics) for first-year students, advanced semiconductor physics for postgraduates and nanoelectronics for postgraduates. He, together with his group members, has been studying the physical properties of carbon nanotubes (CNTs), diamond-like carbon films and CVD diamond and developing a variety of devices based on these carbon materials, including CNT based diodes, CNT nitrophenol/NH3/glucose sensors; complementary CNT-network logic gates, heat transport in CNTs, influence of dichlorocarbene functionalzation on the electrical properties of CNTs, the formation mechanism of diamond-like carbon thin films, etc. He has jointly published 202 peer reviewed journal papers and 170 conference papers/presentations. He serves as director of master degree of science electronics programme and supervisor of nanoelectronics laboratory I and II. He has successfully organized and chaired the Symposium of Nanodevices and Nanofabrication in 2011, 2009, 2007 and 2005, respectively, for the International Conference on Materials for Advanced Technologies.
Prof Qing Zhang's research interests cover the physical properties and electronic and optoelectronic applications of carbon nanotubes, diamond-like carbon films, CVD diamond, graphene and several other nanostructures.
 
  • Mechanical-Electric Power Conversion Based on Chemical Potential Difference
  • Novel Carbon Nanotube Transistors for Low-power Flexible Electronic Applications
US 2015/0129941 A1: Device And Structure And Method For Forming The Same (2018)
Abstract: In various embodiments, a method for forming a device may be provided. The method may include forming a contact layer at least partially on a substrate. The method may also include forming a device structure adhered to the contact layer. In addition, the method may include depositing a transfer medium such that the device structure is at least partially covered by the transfer medium. The method may further include solidifying the transfer medium. The method may also include separating the contact layer, the device structure and the transfer medium from the substrate. The contact layer may have a greater adhesion to the device structure than to the substrate.

US 2009-0246408: Method of Aligning Nanotubes (2012)
Abstract: A method of aligning nanotubes is described, where a plurality of channels is provided on a substrate (100), a suspension of nanotubes is placed on or adjacent an open surface of the channels (102) and the suspension is allowed to flow into the channels to align the nanotubes substantially parallel to the longitudinal axis of the channels (104).