Academic Profile : Faculty
Asst Prof Roland Tay Yingjie
Assistant Professor, School of Electrical & Electronic Engineering
Email
External Links
Roland received his BEng and Ph.D. in Electrical and Electronic Engineering (EEE) from Nanyang Technological University (NTU) in 2009 and 2016 respectively. After completing his Ph.D., he joined the Royal Melbourne Institute of Technology (RMIT) as a Research Fellow under the Australian Research Council (ARC) Fellowship and worked as Research Scientist at Temasek Laboratories@NTU thereafter. He was awarded the International Postdoctoral Fellowship (IPF) from NTU in 2020 where he undertook his fellowship at California Institute of Technology (Caltech) from 2021 to 2023. In Apr 2023, he joined NTU as an Assistant Professor at the School of EEE.
- Chemical vapour deposition
- Nanomaterial synthesis
- 2D materials
- 3D printing
- Flexible electronics
- Energy storage
- Thermal management
- EMI shielding
- Materials for harsh environment
- Nanomaterial synthesis
- 2D materials
- 3D printing
- Flexible electronics
- Energy storage
- Thermal management
- EMI shielding
- Materials for harsh environment
- CAM CCF 2024 Sub-Project C
- Multi-material 3D extrusion printing for real-time non-invasive multimodal sweat sensors
- Project Morpheus: Drag Reducing Boron Nitride Coating for Very Low Earth Orbits
- Project Morpheus: Drag Reducing Boron Nitride Coating for Very Low Earth Orbits (TL@NTU)
- Project Morpheus: Drag Reducing Boron Nitride Coating for Very Low Earth Orbits (TL@NUS)
- Synthesis of Novel 2D Metal Borides (MBenes) for Micro-Supercapacitors with Excellent Capacitive Behaviours
- Thermal Solutions for Semiconductor Electronics
US 2019/0016600 A1: Boron Nitride Material And Method Of Preparation Thereof (2019)
Abstract: A method of preparing a boron nitride material, such as boron nitride (BN) or boron carbonitride (BCN), is provided. The method may include providing a substrate, and sublimating an amine borane complex onto the substrate to obtain the boron nitride material. The amine borane complex may include, but is not limited to, borazine, amino borane, trimethylamine borane and triethylamine borane. In addition, the temperature at which the sublimating is carried out may be varied to control composition of the boron nitride material formed. In addition, various morphologies can be obtained by using the present method, namely films, nanotubes and porous foam.
Abstract: A method of preparing a boron nitride material, such as boron nitride (BN) or boron carbonitride (BCN), is provided. The method may include providing a substrate, and sublimating an amine borane complex onto the substrate to obtain the boron nitride material. The amine borane complex may include, but is not limited to, borazine, amino borane, trimethylamine borane and triethylamine borane. In addition, the temperature at which the sublimating is carried out may be varied to control composition of the boron nitride material formed. In addition, various morphologies can be obtained by using the present method, namely films, nanotubes and porous foam.
Courses Taught
EE2103 - Semiconductor Fundamentals
EE3013 - Semiconductor Devices and Processing
EE3013 - Semiconductor Devices and Processing