Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxide-semiconductor field effect transistors and its reliability implications
Liu, W. H.
Pey, Kin Leong
Date of Issue2012
School of Electrical and Electronic Engineering
We report a triggering voltage Vtrig for observing gate leakage current (Ig) random telegraph noise (RTN) in the post-breakdown regime of HfLaO dielectric metal gate stacks. Vtrig, the onset voltage to observe RTN in degraded dielectrics, is highly dependent on breakdown hardness, which is controlled by the leakage current compliance (Igl). This dependence is qualitatively analyzed using a percolation dilation model, where generation of additional traps either at different energy levels or spatial locations gives lower Vtrig at higher Igl. The magnitude of Vtrig can be used as a direct indication of the impact of RTN on the performance of the transistor at device level, when Vtrig is evaluated by comparing with the device operating voltage.
DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio
Journal of applied physics
© 2012 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.3676255]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.