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|Title:||Effect of annealing on the temperature-dependent dielectric properties of LaAlO3 at terahertz frequencies||Authors:||Zou, Xingquan
Cheong, Siew Ann
Nair, Saritha K.
Chia, Elbert E. M.
|Keywords:||DRNTU::Science::Physics::Heat and thermodynamics||Issue Date:||2012||Source:||Zou, X., He, M., Springer, D., Lee, D., Nair, S. K., Cheong, S. A., et al. (2012). Effect of annealing on the temperature-dependent dielectric properties of LaAlO3 at terahertz frequencies. AIP Advances, 2(1), 012120-.||Series/Report no.:||AIP advances||Abstract:||We present THz conductivity of LaAlO3 (LAO) as a function of temperature and annealing, using terahertz time-domain spectroscopy (THz-TDS). We observed that, after annealing, spectral weight redistribution occurs, such that the real conductivity σ1(ω) changed from a featureless and almost frequency-independent spectrum, into one where peaks occur near the phonon frequencies. These phonon frequencies increase with increasing temperature. We attribute the appearance of these absorption peaks to the diffusion and relocation of oxygen vacancies. The dielectric functions of annealed LAO are well fitted with the Drude-Lorentz model.||URI:||https://hdl.handle.net/10356/96011
|DOI:||10.1063/1.3679725||Rights:||© 2012 The Authors. This paper was published in AIP Advances and is made available as an electronic reprint (preprint) with permission of the authors. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.3679725]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
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