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|Title:||Ultra-thin and flat mica as gate dielectric layers||Authors:||Low, Chong Guan
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2012||Source:||Low, C. G., & Zhang, Q. (2012). Ultra-thin and Flat Mica as Gate Dielectric Layers. Small, 8(14), 2178-2183.||Series/Report no.:||Small||Abstract:||Ultra-thin and flat mica-based carbon nanotube field-effect transistors reveal the excellent gate control capability and low leakage current due to the high dielectric constant and high dielectric strength of ultra-thin mica as the gate dielectric. Subthreshold swing of 110 mV/dec and carrier mobility improvement are achieved. The ultra-thin mica retains its surface flatness, indicating the potential application for low-dimensional materials in which surface roughness scattering is significant.||URI:||https://hdl.handle.net/10356/96798
|ISSN:||1613-6810||DOI:||http://dx.doi.org/10.1002/smll.201200300||Rights:||© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
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