Ultra-thin and flat mica as gate dielectric layers
Low, Chong Guan
Date of Issue2012
School of Electrical and Electronic Engineering
NOVITAS Nanoelectronics Centre of Excellence
Ultra-thin and flat mica-based carbon nanotube field-effect transistors reveal the excellent gate control capability and low leakage current due to the high dielectric constant and high dielectric strength of ultra-thin mica as the gate dielectric. Subthreshold swing of 110 mV/dec and carrier mobility improvement are achieved. The ultra-thin mica retains its surface flatness, indicating the potential application for low-dimensional materials in which surface roughness scattering is significant.
DRNTU::Engineering::Electrical and electronic engineering
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