dc.contributor.authorRen, Peng
dc.contributor.authorLiu, Peng
dc.contributor.authorXia, Bin
dc.contributor.authorZou, Xi
dc.contributor.authorYou, Lu
dc.contributor.authorWang, Junling
dc.contributor.authorWang, Lan
dc.identifier.citationRen, P., Liu, P., Xia, B., Zou, X., You, L., Wang, J., et al. (2012). Dielectric dynamics of epitaxial BiFeO3 thin films. AIP Advances, 2(2), 022133-.en_US
dc.description.abstractWe report the detailed study on the low temperature dielectric dynamics of the epitaxial BiFeO3 thin films grown on Nb-doped SrTiO3 substrate. The results indicate that the contributions from the thin film dominate the dielectric response, although it comes from both the thin film and the electrode interface. Furthermore, the origins of the low temperature dielectric anomalies are investigated with electric circuit fittings. A possible phase transition at 210 K is revealed from analysis with dielectric loss tangent. The dielectric constants obtained from the constant phase elements (CPEs) are more than 400 even at low temperatures. Finally, the physical significances of the CPE model are discussed.en_US
dc.relation.ispartofseriesAIP advancesen_US
dc.rights© 2012 The Authors. This paper was published in AIP Advances and is made available as an electronic reprint (preprint) with permission of the authors. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4721670]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.titleDielectric dynamics of epitaxial BiFeO3 thin filmsen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.contributor.schoolSchool of Materials Science and Engineering
dc.description.versionPublished versionen_US

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