dc.contributor.authorGuo, Rui
dc.contributor.authorYou, Lu
dc.contributor.authorMotapothula, M.
dc.contributor.authorZhang, Zhen
dc.contributor.authorBreese, Mark B. H.
dc.contributor.authorChen, Lang
dc.contributor.authorWu, Di
dc.contributor.authorWang, Junling
dc.identifier.citationGuo, R., You, L., Motapothula, M., Zhang, Z., Breese, M. B. H., Chen, L., et al. (2012). Influence of target composition and deposition temperature on the domain structure of BiFeO3 thin films. AIP Advances, 2(4), 042104-.en_US
dc.description.abstractDomain structure of BiFeO3 thin films can be controlled by adjusting the target composition or the substrate temperature during pulsed laser deposition. Decreasing Bi content in the target or increasing substrate temperature changes the domain structure of BiFeO3 from 71° to 109°. We suggest that a combination of interface effect and defect induced internal field causes this evolution.en_US
dc.relation.ispartofseriesAIP advancesen_US
dc.rights© 2012 The Authors. This paper was published in AIP Advances and is made available as an electronic reprint (preprint) with permission of the authors. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4757938]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.titleInfluence of target composition and deposition temperature on the domain structure of BiFeO3 thin filmsen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.description.versionPublished versionen_US

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