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|Title:||Mechanism of different switching directions in graphene oxide based RRAM||Authors:||Wang, Zhongrui
Liu, W. J.
Tran, Xuan Anh
Zhu, W. G.
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2012||Source:||Wang, Z., Tjoa, V., Wu, L., Liu, W. J., Fang, Z., Tran, X. A., et al. (2012). Mechanism of different switching directions in graphene oxide based RRAM. Journal of the electrochemical society, 159(6), K177-K182.||Series/Report no.:||Journal of the electrochemical society||Abstract:||Resistive switching in Graphene Oxide (GO) based RRAM has been studied in combination with various commonly used electrodes e.g. Al, Cu, Ni and Ti. For the first time, coexistence of different reproducible switching directions has been observed in the Al/GO/Pt and the Ti/GO/Pt RRAM cells. These switching directions are correlated to the underlying switching mechanisms as revealed by field dependence, temperature dependence and area dependence. Our observation also suggests that both oxygen related functional groups absorption/release and electrode metal ions diffusion play important roles in bipolar resistive switching of GO.||URI:||https://hdl.handle.net/10356/96219
|ISSN:||0013-4651||DOI:||10.1149/2.068206jes||Rights:||© 2012 The Electrochemical Society.This paper was published in Journal of The Electrochemical Society and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official DOI: [http://dx.doi.org/10.1149/2.068206jes]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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