dc.contributor.authorHe, Jun
dc.contributor.authorChen, Ke-Qiu
dc.contributor.authorSun, Changqing
dc.date.accessioned2013-06-12T03:40:56Z
dc.date.available2013-06-12T03:40:56Z
dc.date.copyright2012en_US
dc.date.issued2012
dc.identifier.citationHe, J., Chen, K.-Q., & Sun, C. (2012). The weak π − π interaction originated resonant tunneling and fast switching in the carbon based electronic devices. AIP advances, 2(1), 012137-.en_US
dc.identifier.issn2158-3226en_US
dc.identifier.urihttp://hdl.handle.net/10220/10235
dc.description.abstractBy means of the nonequilibrium Green's functions and the density functional theory, we have investigated the electronic transport properties of C60 based electronic device with different intermolecular interactions. It is found that the electronic transport properties vary with the types of the interaction between two C60 molecules. A fast electrical switching behavior based on negative differential resistance has been found when two molecules are coupled by the weak π − π interaction. Compared to the solid bonding, the weak interaction is found to induce resonant tunneling, which is responsible for the fast response to the applied electric field and hence the velocity of switching.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesAIP advancesen_US
dc.rights© 2012 The Author(s). This paper was published in AIP Advances and is made available as an electronic reprint (preprint) with permission of the author(s). The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.3685777]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.titleThe weak π − π interaction originated resonant tunneling and fast switching in the carbon based electronic devicesen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.3685777
dc.description.versionPublished versionen_US


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