Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/96475
Title: Effect of N incorporation on the characteristics of InSbN P–N diodes
Authors: Pham, H. T.
Lim, Kim Peow
Yoon, Soon Fatt
Tan, Kian Hua
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2011
Source: Lim, K. P., Pham, H. T., Yoon, S. F., & Tan, K. H. (2012). Effect of N incorporation on the characteristics of InSbN P–N diodes. Thin Solid Films, 520(6), 2269-2271.
Series/Report no.: Thin solid films
Abstract: We report on the effect of N incorporation in the characteristics of the 2 μm thick InSbN photoabsorption layer of a p–n diode grown by molecular beam epitaxy using a radio-frequency plasma-assisted nitrogen source. As compared to N free InSb layer, the absorption wavelength extends to near 9 μm. On the other hand, high reverse dark current and series resistances are observed in the electrical characteristics of the InSbN diode which are contributed with the presence of planar growth defects. These results will be useful to those working on midinfrared photodetectors.
URI: https://hdl.handle.net/10356/96475
http://hdl.handle.net/10220/10288
ISSN: 0040-6090
DOI: http://dx.doi.org/10.1016/j.tsf.2011.09.047
Rights: © 2011 Elsevier B.V.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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