Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/96460
Title: Growth and characterization of germanium epitaxial film on silicon (001) using reduced pressure chemical vapor deposition
Authors: Tan, Yew Heng
Tan, Chuan Seng
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2011
Source: Tan, Y. H. & Tan, C. S. (2012). Growth and characterization of germanium epitaxial film on silicon (001) using reduced pressure chemical vapor deposition. Thin Solid Films, 520(7), 2711-2716.
Series/Report no.: Thin solid films
Abstract: High quality germanium (Ge) epitaxial film is grown directly on silicon (001) substrate using a “three-step growth” approach in a reduced pressure chemical vapor deposition system. The growth steps consist of sequential low temperature (LT) at 400 °C, intermediate temperature ramp (LT-HT) of ~ 6.5 °C/min and high temperature (HT) at 600 °C. This is followed by post-growth anneal in hydrogen at temperature ranging from 680 to 825 °C. Analytical characterizations have shown that the Ge epitaxial film of thickness ~ 1 μm experiences thermally induced tensile strain of 0.20% with a threading dislocation density of < 107 cm− 2 under optical microscope and root mean square roughness of ~ 0.9 nm. Further analysis has shown that the annealing time at high temperature has an impact on the surface morphology of the Ge epitaxial film. Further reduction in the RMS roughness can be achieved either through chemical mechanical polishing or to insert an annealing step between the LT–HT ramp and HT steps.
URI: https://hdl.handle.net/10356/96460
http://hdl.handle.net/10220/10290
ISSN: 0040-6090
DOI: http://dx.doi.org/10.1016/j.tsf.2011.11.046
Rights: © 2011 Elsevier B.V.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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