Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/96498
Title: Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy
Authors: Agrawal, M.
Radhakrishnan, K.
Dharmarasu, Nethaji
Ravikiran, Lingaparthi
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Agrawal, M., Dharmarasu, N., Radhakrishnan, K., & Ravikiran, L. (2012). Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy. Thin solid films, 520(24), 7109-7114.
Series/Report no.: Thin solid films
Abstract: The structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm diameter Si (111) substrate by ammonia molecular beam epitaxy have been reported. High resolution X-ray diffraction, micro-Raman spectroscopy, transmission electron microscopy and secondary ion mass spectroscopy have been used to study the influence of AlN thickness and AlGaN growth temperature on the quality of GaN. GaN grown on thicker AlN showed reduced dislocation density and lesser tensile strain. Three-dimensional growth regime was observed for GaN grown at lower AlGaN growth temperature while higher AlGaN growth temperature resulted in two-dimensional growth mode. The dislocation bending and looping at the AlGaN/AlN interface was found to have significant influence on the dislocation density and strain in the GaN layer. The evolution and interaction of threading dislocations play a major role in determining the quality and the strain states of GaN.
URI: https://hdl.handle.net/10356/96498
http://hdl.handle.net/10220/10299
ISSN: 0040-6090
DOI: http://dx.doi.org/10.1016/j.tsf.2012.08.010
Rights: © 2012 Elsevier B.V.
metadata.item.grantfulltext: none
metadata.item.fulltext: No Fulltext
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