Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/96490
Title: Shape effects on the electronic structure and the optical gain of InAsN/GaAs nanostructures : from a quantum lens to a quantum ring
Authors: Xu, Q.
Zhang, X. W.
Li, S. S.
Chen, Jian
Fan, Weijun
Xia, Jian-Bai
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Chen, J., Fan, W., Xu, Q., Zhang, X. W., Li, S. S., & Xia, J.-B. (2012). Shape effects on the electronic structure and the optical gain of InAsN/GaAs nanostructures : from a quantum lens to a quantum ring. Superlattices and microstructures, 52(4), 618-631.
Series/Report no.: Superlattices and microstructures
Abstract: The electronic structures of self-assembled InAs1−xNx/GaAs nanostructures from quantum lens to quantum rings (QRs) are calculated using the 10-band k.p method and the valence force field (VFF) method. With the variation of shape of the nanostructure and nitrogen (N) content, it shows that the N and the strains can significantly affect the energy levels especially the conduction band because the N resonant state has repulsion interaction with the conduction band due to the band anticrossing (BAC). The structures with N and greater height have smaller transition energy, and the structures with N have greater optical gain due to its overwhelming greater value of factor fc+fv−1fc+fv−1. After analyzing the shape effect, we suggested that the nanostructures with volcano shape are preferred because the maximum optical gain occurs for quantum volcano. With our simulation result, researchers could select quantum dots (QDs) structures to design laser with better performance.
URI: https://hdl.handle.net/10356/96490
http://hdl.handle.net/10220/10301
ISSN: 0749-6036
DOI: http://dx.doi.org/10.1016/j.spmi.2012.06.018
Rights: © 2012 Elsevier Ltd.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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