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Title: Fabrication and characterization of carbon nanotube intermolecular p–n junctions
Authors: Li, H.
Zhang, Q.
Yap, Chin Chong
Tay, Beng Kang
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Li, H., Zhang, Q., Yap, C. C., & Tay, B. K. (2012). Fabrication and characterization of carbon nanotube intermolecular p–n junctions. Solid-State Electronics, 77, 46-50.
Series/Report no.: Solid-state electronics
Abstract: We demonstrate carbon nanotube intermolecular p–n junctions and study the electron transport mechanisms. Thermionic emission is the main transport mechanisms under forward bias while tunneling dominates the electron transport of the reverse bias condition. A kink point appearing on the plot of ln(I/V2) versus 1/V indicates that the transport mechanism experiences a transition from direct tunneling to the Fowler–Nordheim tunneling under the reverse bias condition. In contrast, the Arrhenius plot of the I–V curve at forward biases suggests that tunneling is more important than the thermionic emission below 50 K.
ISSN: 0038-1101
DOI: 10.1016/j.sse.2012.05.011
Rights: © 2012 Elsevier Ltd.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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