Symmetrical negative differential resistance behavior of a resistive switching device
Author
Du, Yuanmin
Pan, Hui
Wang, Shijie
Wu, Tom
Feng, Yuan Ping
Pan, Jisheng
Wee, Andrew Thye Shen
Date of Issue
2012School
School of Physical and Mathematical Sciences
Abstract
With a thin insulator sandwiched between two electrodes, the negative differential resistance (NDR) behavior has been frequently reported for its potential device applications. Here we report the experimental observation of a symmetric NDR characteristic in a resistive switching device based on TiO2. We propose a charge storage mechanism for the NDR effect, with oxygen molecular ions working as the active source, in a thin insulating layer. Current–voltage measurements demonstrated a highly reproducible state at about 0.65 eV, and the photoelectron spectroscopy measurements showed that it complies well with the Ti3d band gap state. Our first-principle calculations confirm that charge storage and release arise from trapping and detrapping of oxygen molecular ions at the defect sites. The results and mechanism demonstrated here in a thin layer could be extended to other systems approaching molecular dimensions for device applications.
Type
Journal Article
Series/Journal Title
ACS nano
Rights
© 2012 American Chemical Society.
Collections
http://dx.doi.org/10.1021/nn204907t
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