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      Symmetrical negative differential resistance behavior of a resistive switching device

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      Author
      Du, Yuanmin
      Pan, Hui
      Wang, Shijie
      Wu, Tom
      Feng, Yuan Ping
      Pan, Jisheng
      Wee, Andrew Thye Shen
      Date of Issue
      2012
      School
      School of Physical and Mathematical Sciences
      Abstract
      With a thin insulator sandwiched between two electrodes, the negative differential resistance (NDR) behavior has been frequently reported for its potential device applications. Here we report the experimental observation of a symmetric NDR characteristic in a resistive switching device based on TiO2. We propose a charge storage mechanism for the NDR effect, with oxygen molecular ions working as the active source, in a thin insulating layer. Current–voltage measurements demonstrated a highly reproducible state at about 0.65 eV, and the photoelectron spectroscopy measurements showed that it complies well with the Ti3d band gap state. Our first-principle calculations confirm that charge storage and release arise from trapping and detrapping of oxygen molecular ions at the defect sites. The results and mechanism demonstrated here in a thin layer could be extended to other systems approaching molecular dimensions for device applications.
      Type
      Journal Article
      Series/Journal Title
      ACS nano
      Rights
      © 2012 American Chemical Society.
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      • SPMS Journal Articles
      http://dx.doi.org/10.1021/nn204907t
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