Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/96609
Title: Symmetrical negative differential resistance behavior of a resistive switching device
Authors: Du, Yuanmin
Pan, Hui
Wang, Shijie
Wu, Tom
Feng, Yuan Ping
Pan, Jisheng
Wee, Andrew Thye Shen
Issue Date: 2012
Source: Du, Y., Pan, H., Wang, S., Wu, T., Feng, Y. P., Pan, J., et al. (2012). Symmetrical Negative Differential Resistance Behavior of a Resistive Switching Device. ACS Nano, 6(3), 2517-2523.
Series/Report no.: ACS nano
Abstract: With a thin insulator sandwiched between two electrodes, the negative differential resistance (NDR) behavior has been frequently reported for its potential device applications. Here we report the experimental observation of a symmetric NDR characteristic in a resistive switching device based on TiO2. We propose a charge storage mechanism for the NDR effect, with oxygen molecular ions working as the active source, in a thin insulating layer. Current–voltage measurements demonstrated a highly reproducible state at about 0.65 eV, and the photoelectron spectroscopy measurements showed that it complies well with the Ti3d band gap state. Our first-principle calculations confirm that charge storage and release arise from trapping and detrapping of oxygen molecular ions at the defect sites. The results and mechanism demonstrated here in a thin layer could be extended to other systems approaching molecular dimensions for device applications.
URI: https://hdl.handle.net/10356/96609
http://hdl.handle.net/10220/10328
ISSN: 1936-0851
DOI: http://dx.doi.org/10.1021/nn204907t
Rights: © 2012 American Chemical Society.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:SPMS Journal Articles

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