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|Title:||Symmetrical negative differential resistance behavior of a resistive switching device||Authors:||Du, Yuanmin
Feng, Yuan Ping
Wee, Andrew Thye Shen
|Issue Date:||2012||Source:||Du, Y., Pan, H., Wang, S., Wu, T., Feng, Y. P., Pan, J., et al. (2012). Symmetrical Negative Differential Resistance Behavior of a Resistive Switching Device. ACS Nano, 6(3), 2517-2523.||Series/Report no.:||ACS nano||Abstract:||With a thin insulator sandwiched between two electrodes, the negative differential resistance (NDR) behavior has been frequently reported for its potential device applications. Here we report the experimental observation of a symmetric NDR characteristic in a resistive switching device based on TiO2. We propose a charge storage mechanism for the NDR effect, with oxygen molecular ions working as the active source, in a thin insulating layer. Current–voltage measurements demonstrated a highly reproducible state at about 0.65 eV, and the photoelectron spectroscopy measurements showed that it complies well with the Ti3d band gap state. Our first-principle calculations confirm that charge storage and release arise from trapping and detrapping of oxygen molecular ions at the defect sites. The results and mechanism demonstrated here in a thin layer could be extended to other systems approaching molecular dimensions for device applications.||URI:||https://hdl.handle.net/10356/96609
|ISSN:||1936-0851||DOI:||http://dx.doi.org/10.1021/nn204907t||Rights:||© 2012 American Chemical Society.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||SPMS Journal Articles|
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