Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/96484
Title: Preparation of supercapacitor electrodes through selection of graphene surface functionalities
Authors: Lai, Linfei
Yang, Huanping
Wang, Liang
Teh, Boon Kin
Zhong, Jianqiang
Chou, Harry
Chen, Luwei
Chen, Wei
Shen, Zexiang
Ruoff, Rodney S.
Lin, Jianyi
Issue Date: 2012
Source: Lai, L., Yang, H., Wang, L., Teh, B. K., Zhong, J., Chou, H., et al. (2012). Preparation of Supercapacitor Electrodes through Selection of Graphene Surface Functionalities. ACS Nano, 6(7), 5941-5951.
Series/Report no.: ACS nano
Abstract: In order to investigate the effect of graphene surface chemistry on the electrochemical performance of graphene/polyaniline composites as supercapacitor electrodes, graphene oxide (G-O), chemically reduced G-O (RG-O), nitrogen-doped RG-O (N-RG-O), and amine-modified RG-O (NH2-RG-O) were selected as carriers and loaded with about 9 wt % of polyaniline (PANi). The surface chemistry of these materials was analyzed by FTIR, NEXAFS, and XPS, and the type of surface chemistry was found to be important for growth of PANi that influences the magnitude of increase of specific capacitance. The NH2-RG-O/PANi composite exhibited the largest increase in capacitance with a value as high as 500 F g–1 and good cyclability with no loss of capacitance over 680 cycles, much better than that of RG-O/PANi, N-RG-O/PANi, and G-O/PANi when measured in a three-electrode system. A NH2-RG-O/PANi//N-RG-O supercapacitor cell has a capacitance of 79 F g–1, and the corresponding specific capacitance for NH2-RG-O/PANi is 395 F g–1. This research highlights the importance of introducing −NH2 to RG-O to achieve highly stable cycling performance and high capacitance values.
URI: https://hdl.handle.net/10356/96484
http://hdl.handle.net/10220/10337
ISSN: 1936-0851
DOI: http://dx.doi.org/10.1021/nn3008096
Rights: © 2012 American Chemical Society.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:SPMS Journal Articles

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