dc.contributor.authorLi, Hai
dc.contributor.authorYin, Zongyou
dc.contributor.authorHe, Qiyuan
dc.contributor.authorLi, Hong
dc.contributor.authorHuang, Xiao
dc.contributor.authorLu, Gang
dc.contributor.authorFam, Derrick Wen Hui
dc.contributor.authorTok, Alfred Iing Yoong
dc.contributor.authorZhang, Qing
dc.contributor.authorZhang, Hua
dc.identifier.citationLi, H., Yin, Z., He, Q., Li, H., Huang, X., Lu, G., et al. (2012). Fabrication of Single- and Multilayer MoS2 Film-Based Field-Effect Transistors for Sensing NO at Room Temperature. Small, 8(1), 63-67.en_US
dc.description.abstractSingle- and multilayer MoS2 films are deposited onto Si/SiO2 using the mechanical exfoliation technique. The films were then used for the fabrication of field-effect transistors (FETs). These FET devices can be used as gas sensors to detect nitrous oxide (NO). Although the single-layer MoS2 device shows a rapid response after exposure to NO, the current was found to be unstable. The two-, three-, and four-layer MoS2 devices show both stable and sensitive responses to NO down to a concentration of 0.8 ppm.en_US
dc.rights© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en_US
dc.titleFabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperatureen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineering

Files in this item


There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record