dc.contributor.authorLi, Hai
dc.contributor.authorYin, Zongyou
dc.contributor.authorHe, Qiyuan
dc.contributor.authorLi, Hong
dc.contributor.authorHuang, Xiao
dc.contributor.authorLu, Gang
dc.contributor.authorFam, Derrick Wen Hui
dc.contributor.authorTok, Alfred Iing Yoong
dc.contributor.authorZhang, Qing
dc.contributor.authorZhang, Hua
dc.date.accessioned2013-06-13T07:22:59Z
dc.date.available2013-06-13T07:22:59Z
dc.date.copyright2012en_US
dc.date.issued2012
dc.identifier.citationLi, H., Yin, Z., He, Q., Li, H., Huang, X., Lu, G., et al. (2012). Fabrication of Single- and Multilayer MoS2 Film-Based Field-Effect Transistors for Sensing NO at Room Temperature. Small, 8(1), 63-67.en_US
dc.identifier.issn1613-6829en_US
dc.identifier.urihttp://hdl.handle.net/10220/10354
dc.description.abstractSingle- and multilayer MoS2 films are deposited onto Si/SiO2 using the mechanical exfoliation technique. The films were then used for the fabrication of field-effect transistors (FETs). These FET devices can be used as gas sensors to detect nitrous oxide (NO). Although the single-layer MoS2 device shows a rapid response after exposure to NO, the current was found to be unstable. The two-, three-, and four-layer MoS2 devices show both stable and sensitive responses to NO down to a concentration of 0.8 ppm.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesSmallen_US
dc.rights© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en_US
dc.titleFabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperatureen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineering
dc.identifier.doihttp://dx.doi.org/10.1002/smll.201101016


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