dc.contributor.authorUtama, Muhammad Iqbal Bakti
dc.contributor.authorZhang, Qing
dc.contributor.authorJia, Shuangfeng
dc.contributor.authorLi, Dehui
dc.contributor.authorWang, Jianbo
dc.contributor.authorXiong, Qihua
dc.date.accessioned2013-06-13T07:59:30Z
dc.date.available2013-06-13T07:59:30Z
dc.date.copyright2012en_US
dc.date.issued2012
dc.identifier.citationUtama, M. I. B., Zhang, Q., Jia, S., Li, D., Wang, J., & Xiong, Q. (2012). Epitaxial II–VI Tripod Nanocrystals: A Generalization of van der Waals Epitaxy for Nonplanar Polytypic Nanoarchitectures. ACS Nano, 6(3), 2281-2288.en_US
dc.identifier.issn1936-0851en_US
dc.identifier.urihttp://hdl.handle.net/10220/10362
dc.description.abstractWe report for the first time the synthesis of nonplanar epitaxial tripod nanocrystals of II–VI compounds (ZnO, ZnS, ZnSe, ZnTe, CdS, CdSe, and CdTe) on muscovite mica substrate. With CdS as a case study, we conclude via Raman spectroscopy and electron microscopy studies that the tripods, which are found to be polytypic, followed a seeded growth mechanism. The epitaxy, manifested by the in-plane alignment of the legs of the tripods within a substrate, is attributed to the van der Waals interaction between the tripod bases and the mica surface, instead of to the covalent chemical bond which would require lattice matching between the epilayer and the substrate. The results demonstrated herein could have widespread immediate implications, including the potential of van der Waals epitaxy to be applicable in producing ordered arrays of more complex nanoarchitectures from various classes of compounds toward a broad range of technological applications.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesACS nanoen_US
dc.rights© 2012 American Chemical Society.en_US
dc.titleEpitaxial II–VI tripod nanocrystals : a generalization of van der Waals epitaxy for nonplanar polytypic nanoarchitecturesen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineering
dc.identifier.doihttp://dx.doi.org/10.1021/nn204344z


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