dc.contributor.authorOng, Shih Ni
dc.contributor.authorYeo, Kiat Seng
dc.contributor.authorChew, Kok Wai Johnny
dc.contributor.authorChan, L. H. K.
dc.contributor.authorLoo, Xi Sung
dc.contributor.authorBoon, Chirn Chye
dc.contributor.authorDo, Manh Anh
dc.date.accessioned2013-06-14T01:43:33Z
dc.date.available2013-06-14T01:43:33Z
dc.date.copyright2011en_US
dc.date.issued2011
dc.identifier.citationOng, S. N., Yeo, K. S., Chew, K. W. J., Chan, L. H. K., Loo, X. S., Boon, C. C., et al. (2012). A new field dependent mobility model for high frequency channel thermal noise of deep submicron RFCMOS. Solid-State Electronics, 68, 32-37.en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/10220/10377
dc.description.abstractIn this paper, a new field dependent effective mobility model including the drain-induced vertical field effect (DIVF) is presented to calculate the channel thermal noise of short channel MOSFETs operating at high frequencies. Based on the new channel thermal noise model, the simulated channel thermal noise spectral densities have been compared to the channel thermal noise directly extracted from noise measurements on devices fabricated using GLOBALFOUNDRIES’ 0.13 μm RFCMOS technology. The comparison has been done across different channel length, finger width and number of finger for different frequencies, gate biases and drain biases. Excellent agreement between simulated and extracted noise data has shown that the proposed model is scalable over different dimensions and operating conditions. The proposed model is simple and can be easily implemented in a circuit simulation environment.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesSolid-state electronicsen_US
dc.rights© 2011 Elsevier Ltd.en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.titleA new field dependent mobility model for high frequency channel thermal noise of deep submicron RFCMOSen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1016/j.sse.2011.09.017


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