dc.contributor.authorGuai, Guan Hong
dc.contributor.authorLeiw, Ming Yian
dc.contributor.authorNg, Chee Mang
dc.contributor.authorLi, Chang Ming
dc.date.accessioned2013-06-14T02:52:03Z
dc.date.available2013-06-14T02:52:03Z
dc.date.copyright2012en_US
dc.date.issued2012
dc.identifier.citationGuai, G. H., Leiw, M. Y., Ng, C. M., & Li, C. M. (2012). Sulfur-Doped Nickel Oxide Thin Film as an Alternative to Pt for Dye-Sensitized Solar Cell Counter Electrodes. Advanced Energy Materials, 2(3), 334-338.en_US
dc.identifier.issn1614-6832en_US
dc.identifier.urihttp://hdl.handle.net/10220/10389
dc.description.abstractA low-cost, sulfur-doped NiO (S–NiO) thin film is electrodeposited on fluorine-doped SnO2 substrate and studied in an iodide-based redox system. High electrochemical activity is present because of a large catalytic surface area and a low charge transfer resistance. A dye- sensitized solar cell with a low-loaded S–NiO counter electrode achieves a power conversion efficiency of 5.04%, close to that of a cell with a conventional platinized electrode.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesAdvanced energy materialsen_US
dc.rights© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en_US
dc.titleSulfur-doped nickel oxide thin film as an alternative to Pt for dye-sensitized solar cell counter electrodesen_US
dc.typeJournal Article
dc.contributor.researchCentre for Advanced Bionanosystemsen_US
dc.contributor.schoolSchool of Chemical and Biomedical Engineeringen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1002/aenm.201100582


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