dc.contributor.authorLee, Chun Wei
dc.contributor.authorRaman Pillai, Suresh Kumar
dc.contributor.authorLuan, Xuena
dc.contributor.authorWang, Yilei
dc.contributor.authorLi, Chang Ming
dc.contributor.authorChan-Park, Mary B.
dc.date.accessioned2013-06-14T03:35:51Z
dc.date.available2013-06-14T03:35:51Z
dc.date.copyright2012en_US
dc.date.issued2012
dc.identifier.citationLee, C. W., Raman Pillai, S. K., Luan, X., Wang, Y., Li, C. M., & Chan-Park, M. B. (2012). High-Performance Inkjet Printed Carbon Nanotube Thin Film Transistors with High-k HfO2 Dielectric on Plastic Substrate. Small, 8(19), 2941-2947.en_US
dc.identifier.issn1613-6810en_US
dc.identifier.urihttp://hdl.handle.net/10220/10395
dc.description.abstractInkjet printing is used to fabricate CN-TFT devices on PET substrate with 70 nm HfO2 gate dielectric. By varying the amount of printing, effective mobility can be raised to 43 cm2 V−1 s−1 with on/off ratio ≥ 104 for devices with channel length 160 μm. This demonstrates that inkjet printing is promising for fabrication of high-performance devices in flexible electronics.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesSmallen_US
dc.rights© 2012 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.en_US
dc.titleHigh-performance inkjet printed carbon nanotube thin film transistors with high-k HfO2 dielectric on plastic substrateen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Chemical and Biomedical Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1002/smll.201200041


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