dc.contributor.authorLi, Jiangbo
dc.contributor.authorLuan, Xuena
dc.contributor.authorHuang, Yinxi
dc.contributor.authorDunham, Simon
dc.contributor.authorChen, Peng
dc.contributor.authorRogers, John A.
dc.contributor.authorChan-Park, Mary B.
dc.date.accessioned2013-06-17T02:40:19Z
dc.date.available2013-06-17T02:40:19Z
dc.date.copyright2012en_US
dc.date.issued2012
dc.identifier.citationLi, J., Luan, X., Huang, Y., Dunham, S., Chen, P., Rogers, J. A., et al. (2012). On-chip diameter-dependent conversion of metallic to semiconducting single-walled carbon nanotubes by immersion in 2-ethylanthraquinone. RSC Advances, 2(4), 1275-1281.en_US
dc.identifier.issn2046-2069en_US
dc.identifier.urihttp://hdl.handle.net/10220/10412
dc.description.abstractThe key hurdle to the practical use of as-grown single-walled carbon nanotubes (SWNTs) for high performance nanoelectronics is the unavoidable presence of metallic nanotubes with current synthesis methods. We present a simple approach to convert metallic SWNTs to semiconducting ones in situ to improve device field effect behaviour, using an aromatic compound (2-ethylanthraquinone - EAQ) which is a mild radical initiator. We show that the reaction between EAQ-generated radicals and SWNTs is diameter and metallicity dependent; in the medium-diameter regime (0.8 to 1.0 nm), the EAQ-generated radicals preferentially attack the metallic SWNTs over semiconducting ones and convert them to semiconducting, as evidenced by several orders (10 and 104) increase in the on/off ratio.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesRSC advancesen_US
dc.rights© 2012 The Royal Society of Chemistry.en_US
dc.titleOn-chip diameter-dependent conversion of metallic to semiconducting single-walled carbon nanotubes by immersion in 2-ethylanthraquinoneen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Chemical and Biomedical Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1039/c1ra00817j


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