Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/97095
Title: Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers
Authors: Kusuma, Damar Yoga
Lee, Pooi See
Issue Date: 2012
Source: Kusuma, D. Y., & Lee, P. S. (2012). Ferroelectric Tunnel Junction Memory Devices made from Monolayers of Vinylidene Fluoride Oligomers. Advanced Materials, 24(30), 4163-4169.
Series/Report no.: Advanced materials
Abstract: Conductance bistability in Pt/Si–vinylidene fluoride (VDF) oligomer–Au ferroelectric tunnel junction devices is demonstrated. I–V and C–V measurements reveal bistable conductance switching within biasing voltage of ±0.5V with stable memory retention up to 1 × 104 cycles. The memory element exhibits a low switching voltage of ±1.0 V, coincides with the coercive field of the ferroelectric VDF oligomer monolayer films in use.
URI: https://hdl.handle.net/10356/97095
http://hdl.handle.net/10220/10458
ISSN: 1521-4095
DOI: http://dx.doi.org/10.1002/adma.201104476
Rights: © 2012 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

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