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|Title:||Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers||Authors:||Kusuma, Damar Yoga
Lee, Pooi See
|Issue Date:||2012||Source:||Kusuma, D. Y., & Lee, P. S. (2012). Ferroelectric Tunnel Junction Memory Devices made from Monolayers of Vinylidene Fluoride Oligomers. Advanced Materials, 24(30), 4163-4169.||Series/Report no.:||Advanced materials||Abstract:||Conductance bistability in Pt/Si–vinylidene fluoride (VDF) oligomer–Au ferroelectric tunnel junction devices is demonstrated. I–V and C–V measurements reveal bistable conductance switching within biasing voltage of ±0.5V with stable memory retention up to 1 × 104 cycles. The memory element exhibits a low switching voltage of ±1.0 V, coincides with the coercive field of the ferroelectric VDF oligomer monolayer films in use.||URI:||https://hdl.handle.net/10356/97095
|ISSN:||1521-4095||DOI:||http://dx.doi.org/10.1002/adma.201104476||Rights:||© 2012 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||MSE Journal Articles|
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