Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers
Kusuma, Damar Yoga
Lee, Pooi See
Date of Issue2012
School of Materials Science and Engineering
Conductance bistability in Pt/Si–vinylidene fluoride (VDF) oligomer–Au ferroelectric tunnel junction devices is demonstrated. I–V and C–V measurements reveal bistable conductance switching within biasing voltage of ±0.5V with stable memory retention up to 1 × 104 cycles. The memory element exhibits a low switching voltage of ±1.0 V, coincides with the coercive field of the ferroelectric VDF oligomer monolayer films in use.
© 2012 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.