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|Title:||Room temperature CO gas sensing using Zn-doped In2O3 single nanowire field effect transistors||Authors:||Singh, Nandan
Lee, Pooi See
|Issue Date:||2010||Source:||Singh, N., Yan, C., & Lee, P. S. (2010). Room temperature CO gas sensing using Zn-doped In2O3 single nanowire field effect transistors. Sensors and Actuators B: Chemical, 150(1), 19-24.||Series/Report no.:||Sensors and actuators B: chemical||Abstract:||We demonstrate a room temperature sensing of CO gas (1–5 ppm) using high performance single Zn-doped In2O3 nanowire field effect transistors (Zn–In2O3 NW-FETs). Zn–In2O3 nanowires were grown in a horizontal CVD furnace; single Zn–In2O3 NW-FETs were fabricated using SiNx dielectric layer and bottom gate. Electrical measurements on the NW-FETs showed high performance devices, with a high “ON” current of 8 × 10−6 A at a 5 V drain voltage, high on-off ratio of ∼106 and electron mobility of 139 cm2 V−1 s−1. Sensing properties of CO gas were studied using these NW-FETs at room temperature. Doping of Zn2+ into the In2O3 NW enhances the sensor response compared to pure In2O3 nanowire. A good selectivity of CO gas over NO and NO2 can also be achieved. The improved sensor response at room temperature is attributed to the defects created and a change in conductivity of the nanowire upon Zn-doping. Significant negative threshold voltage shift of −3.5 V was observed after exposure to a low concentration of CO gas at 5 ppm. This approach represents an important step towards the room temperature sensing of hazardous gas.||URI:||https://hdl.handle.net/10356/97106
|ISSN:||0925-4005||DOI:||http://dx.doi.org/10.1016/j.snb.2010.07.051||Rights:||© 2010 Elsevier B.V.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||MSE Journal Articles|
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