Nickel silicide formation on Si(100) and Poly-Si with a presilicide N2 + implantation
Lee, Pooi See
Pey, Kin Leong
Chi, Dong Zhi
Dai, J. Y.
Date of Issue2001
School of Materials Science and Engineering
The key feature of this study is to incorporate N2 + implant prior to Ni sputtering on the poly-Si gate and source/drain regions. The results show that the incorporation of the presilicide N2 + implant is able to suppress agglomeration in the Ni silicide films up to 900°C and enhance the phase stability of NiSi on Si(100) up to 750°C. Stable and low sheet resistance was achieved on the silicided undoped poly-Si up to 700°C due to reduced layer inversion, which is driven by grain boundary energy and the surface energy of the poly-Si.
DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Journal of electronic materials
© 2001 TMS.