Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/97343
Title: A simple approach to form Ge nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric by pulsed laser ablation
Authors: Yuan, C. L.
Darmawan, P.
Setiawan, Y.
Lee, Pooi See
Keywords: DRNTU::Engineering::Materials::Nanostructured materials
Issue Date: 2006
Source: Yuan, C. L., Darmawan, P., Setiawan, Y., & Lee, P. S. (2006). A simple approach to form Ge nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric by pulsed laser ablation. Europhysics Letters (EPL), 74(1), 177-180.
Series/Report no.: Europhysics letters (EPL)
Abstract: We have successfully developed a novel method to fabricate the memory structure of Ge nanocrystals embedded in amorphous Lu2O3 high-k dielectric using pulsed laser ablation. The mean size and aerial density of the Ge nanocrystals are estimated to be about 9 nm and 7 × 1011 cm−2, respectively. Good performances in terms of large memory window and long data retention were observed. Our preparation method is simple, fast and economical.
URI: https://hdl.handle.net/10356/97343
http://hdl.handle.net/10220/10483
ISSN: 0295-5075
DOI: 10.1209/epl/i2005-10505-4
Rights: © 2006 EDP Sciences.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

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