Please use this identifier to cite or link to this item:
|Title:||A simple approach to form Ge nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric by pulsed laser ablation||Authors:||Yuan, C. L.
Lee, Pooi See
|Keywords:||DRNTU::Engineering::Materials::Nanostructured materials||Issue Date:||2006||Source:||Yuan, C. L., Darmawan, P., Setiawan, Y., & Lee, P. S. (2006). A simple approach to form Ge nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric by pulsed laser ablation. Europhysics Letters (EPL), 74(1), 177-180.||Series/Report no.:||Europhysics letters (EPL)||Abstract:||We have successfully developed a novel method to fabricate the memory structure of Ge nanocrystals embedded in amorphous Lu2O3 high-k dielectric using pulsed laser ablation. The mean size and aerial density of the Ge nanocrystals are estimated to be about 9 nm and 7 × 1011 cm−2, respectively. Good performances in terms of large memory window and long data retention were observed. Our preparation method is simple, fast and economical.||URI:||https://hdl.handle.net/10356/97343
|ISSN:||0295-5075||DOI:||http://dx.doi.org/10.1209/epl/i2005-10505-4||Rights:||© 2006 EDP Sciences.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||MSE Journal Articles|
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.