Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/97258
Title: Leakage conduction mechanism of amorphous Lu2O3 high-k dielectric films fabricated by pulsed laser ablation
Authors: Yuan, C. L.
Darmawan, P.
Chan, Mei Yin
Lee, Pooi See
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Issue Date: 2007
Source: Yuan, C. L., Darmawan, P., Chan, M. Y., & Lee, P. S. (2007). Leakage conduction mechanism of amorphous Lu2O3 high-k dielectric films fabricated by pulsed laser ablation. Europhysics letters (EPL), 77(6).
Series/Report no.: Europhysics letters (EPL)
Abstract: Amorphous Lu2O3 thin films have been deposited on p-type (111) Si substrates by pulsed laser deposition (PLD). A equivalent oxide thickness (EOT) of 1.16 nm with a leakage current density of 4×10−5 A/cm2 at 1 V accumulation bias was obtained for 4.5 nm thick Lu2O3 thin film deposited at room temperature followed by post-deposition anneal (PDA) at 600 °C in oxygen ambient. The leakage conduction mechanisms of amorphous Lu2O3 films were investigated. It was found that the Poole-Frenkel (P-F) emission is the dominant conduction mechanism at high electric field region.
URI: https://hdl.handle.net/10356/97258
http://hdl.handle.net/10220/10498
ISSN: 0295-5075
DOI: http://dx.doi.org/10.1209/0295-5075/77/67001
Rights: © 2007 EPLA.
metadata.item.grantfulltext: none
metadata.item.fulltext: No Fulltext
Appears in Collections:MSE Journal Articles

Page view(s)

381
checked on Dec 24, 2019

Google ScholarTM

Check

Altmetric

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.