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|Title:||Leakage conduction mechanism of amorphous Lu2O3 high-k dielectric films fabricated by pulsed laser ablation||Authors:||Yuan, C. L.
Chan, Mei Yin
Lee, Pooi See
|Keywords:||DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films||Issue Date:||2007||Source:||Yuan, C. L., Darmawan, P., Chan, M. Y., & Lee, P. S. (2007). Leakage conduction mechanism of amorphous Lu2O3 high-k dielectric films fabricated by pulsed laser ablation. Europhysics letters (EPL), 77(6).||Series/Report no.:||Europhysics letters (EPL)||Abstract:||Amorphous Lu2O3 thin films have been deposited on p-type (111) Si substrates by pulsed laser deposition (PLD). A equivalent oxide thickness (EOT) of 1.16 nm with a leakage current density of 4×10−5 A/cm2 at 1 V accumulation bias was obtained for 4.5 nm thick Lu2O3 thin film deposited at room temperature followed by post-deposition anneal (PDA) at 600 °C in oxygen ambient. The leakage conduction mechanisms of amorphous Lu2O3 films were investigated. It was found that the Poole-Frenkel (P-F) emission is the dominant conduction mechanism at high electric field region.||URI:||https://hdl.handle.net/10356/97258
|ISSN:||0295-5075||DOI:||10.1209/0295-5075/77/67001||Rights:||© 2007 EPLA.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||MSE Journal Articles|
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