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Title: Effect of Ti alloying in nickel silicide formation
Authors: Setiawan, Y.
Tan, C. W.
Lee, Pooi See
Pey, Kin Leong
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Issue Date: 2005
Source: Setiawan, Y., Lee, P. S., Tan, C. W., & Pey, K. L. (2006). Effect of Ti alloying in nickel silicide formation. Thin Solid Films, 504(1-2), 153-156.
Series/Report no.: Thin solid films
Abstract: In the presence of interfacial oxide, an addition of 20 at.% Ti to Ni film leads to the formation of a thick TiOx layer at the Ni(Ti)/Si interface upon annealing, preventing the inter-diffusion of Ni and Si hence hindering the Ni silicide formation up to 700 °C. At 800 °C, a mixture of predominant NiSi phase with some NiSi2 grains facetted in (111) plane was observed. A different mechanism occurred for the sample with minimal oxygen contamination where Ni3Si2 was found to be stable up to 900 °C. Nevertheless, Ti addition has delayed the silicidation reaction to 600 °C.
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2005.09.066
Rights: © 2005 Elsevier B.V.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles
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