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|Title:||Effect of Ti alloying in nickel silicide formation||Authors:||Setiawan, Y.
Tan, C. W.
Lee, Pooi See
Pey, Kin Leong
|Keywords:||DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films||Issue Date:||2005||Source:||Setiawan, Y., Lee, P. S., Tan, C. W., & Pey, K. L. (2006). Effect of Ti alloying in nickel silicide formation. Thin Solid Films, 504(1-2), 153-156.||Series/Report no.:||Thin solid films||Abstract:||In the presence of interfacial oxide, an addition of 20 at.% Ti to Ni film leads to the formation of a thick TiOx layer at the Ni(Ti)/Si interface upon annealing, preventing the inter-diffusion of Ni and Si hence hindering the Ni silicide formation up to 700 °C. At 800 °C, a mixture of predominant NiSi phase with some NiSi2 grains facetted in (111) plane was observed. A different mechanism occurred for the sample with minimal oxygen contamination where Ni3Si2 was found to be stable up to 900 °C. Nevertheless, Ti addition has delayed the silicidation reaction to 600 °C.||URI:||https://hdl.handle.net/10356/97441
|ISSN:||0040-6090||DOI:||10.1016/j.tsf.2005.09.066||Rights:||© 2005 Elsevier B.V.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
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