Erbium silicidation on SiGe for advanced MOS application
Yiew, Daphne Q. F.
Lee, Pooi See
Chi, Dong Zhi
Date of Issue2005
School of Materials Science and Engineering
Ti capping has been found to be beneficial on Er(Si1−yGey)2 formation in Ti/Er/Si1−xGex system. In the case of the system without Ti cap, the sample was oxidized at temperature as low as 300 °C and Er2SiO5 was found to be the predominant phase at all annealing temperatures. On the other hand, for Ti/Er/Si1−xGex samples, no Er2O3 was formed and the predominant phase found after annealing at higher temperature was Er(Si1−yGey)2 resulting in a lower sheet resistance than those without Ti cap. In addition, Ti capping has also improved the surface morphology of the sample by reducing the pyramid-like defects which were found in Er/Si1−xGex samples especially after annealing at 600 °C.
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Thin solid films
© 2005 Elsevier B.V.