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|Title:||Erbium silicidation on SiGe for advanced MOS application||Authors:||Yiew, Daphne Q. F.
Lee, Pooi See
Chi, Dong Zhi
|Keywords:||DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films||Issue Date:||2005||Source:||Yiew, D. Q. F., Setiawan, Y., Lee, P. S., & Chi, D. Z. (2006). Erbium silicidation on SiGe for advanced MOS application. Thin Solid Films, 504(1-2), 91-94.||Series/Report no.:||Thin solid films||Abstract:||Ti capping has been found to be beneficial on Er(Si1−yGey)2 formation in Ti/Er/Si1−xGex system. In the case of the system without Ti cap, the sample was oxidized at temperature as low as 300 °C and Er2SiO5 was found to be the predominant phase at all annealing temperatures. On the other hand, for Ti/Er/Si1−xGex samples, no Er2O3 was formed and the predominant phase found after annealing at higher temperature was Er(Si1−yGey)2 resulting in a lower sheet resistance than those without Ti cap. In addition, Ti capping has also improved the surface morphology of the sample by reducing the pyramid-like defects which were found in Er/Si1−xGex samples especially after annealing at 600 °C.||URI:||https://hdl.handle.net/10356/97473
|ISSN:||0040-6090||DOI:||http://dx.doi.org/10.1016/j.tsf.2005.09.048||Rights:||© 2005 Elsevier B.V.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||MSE Journal Articles|
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