dc.contributor.authorLee, Pooi See
dc.contributor.authorPey, Kin Leong
dc.contributor.authorMangelinck, D.
dc.contributor.authorDing, Jun
dc.contributor.authorChan, L.
dc.date.accessioned2013-06-20T03:21:27Z
dc.date.available2013-06-20T03:21:27Z
dc.date.copyright2003en_US
dc.date.issued2003
dc.identifier.citationLee, P. S., Pey, K. L., Mangelinck, D., Ding, J., & Chan, L. (2003). In situ XRD analysis of Ni(Pt)/Si(100) reactions in low temperature regime ≤400°C. Solid State Communications, 128(9-10), 325-328.en_US
dc.identifier.issn0038-1098en_US
dc.identifier.urihttp://hdl.handle.net/10220/10506
dc.description.abstractThe key feature of this paper is to highlight the use of an in situ XRD technique to the study of the initial reaction of Ni(Pt) on Si(100) isothermally. The concentration of Ni and Pt as a function of time in the low temperature range of less than 400 °C was evaluated. The XRD results show that the solid state reaction started with a outdiffusion of Ni from the Ni(Pt) alloy during the formation of Ni2Si prior to the formation of Ni(Pt)Si. This in situ technique is important for the characterization and the study of the nucleation and kinetics of the first phase formation of advanced alloy silicides.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesSolid state communicationsen_US
dc.rights© 2003 Elsevier Ltd.en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.titleIn situ XRD analysis of Ni(Pt)/Si(100) reactions in low temperature regime ≤400°Cen_US
dc.typeJournal Article
dc.contributor.researchMicroelectronics Centreen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1016/j.ssc.2003.09.004


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