Interface strain study of thin Lu2O3/Si using HRBS
Chan, T. K.
Ho, C. S.
Lee, Pooi See
Date of Issue2008
School of Materials Science and Engineering
The interface of thin Lu2O3 on silicon has been studied using high-resolution RBS (HRBS) for samples annealed at different temperatures. Thin rare earth metal oxides are of interest as candidates for next generation transistor gate dielectrics, due to their high-k values allowing for equivalent oxide thickness (EOT) of less than 1 nm. Among them, Lu2O3 has been found to have the highest lattice energy and largest band gap, making it a good candidate for an alternative high-k gate dielectric. HRBS depth profiling results have shown the existence of a thin (∼2 nm) transitional silicate layer beneath the Lu2O3 films. The thicknesses of the Lu2O3 films were found to be ∼8 nm and the films were determined to be non-crystalline. Angular scans were performed across the [1 1 0] and [1 1 1] axis along planar channels, and clear shifts in the channeling minimum indicate the presence of Si lattice strain at the silicate/Si interface.
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Nuclear instruments and methods in physics research section B: beam interactions with materials and atoms
© 2008 Elsevier B.V.